Product Information

FGH60N60UFDTU-F085

FGH60N60UFDTU-F085 electronic component of ON Semiconductor

Datasheet
IGBT Transistors N-Ch/ 60A 600V FS IGBT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.6566 ea
Line Total: USD 12.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

FGH60N60UFDTU-F085
ON Semiconductor

1 : USD 12.6566
10 : USD 11.218
30 : USD 10.9914
100 : USD 10.6507

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Igbt Type
Voltage - Collector Emitter Breakdown Max
Current - Collector Ic Max
Gate Threshold Voltage-Vgeth
Vceon Max @ Vge Ic
LoadingGif

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The FGH60N60UFDTU-F085 is a N-channel insulated-gate bi-polar transistor (IGBT) designed and manufactured by ON Semiconductor. It is rated at 60 amperes with a rated voltage of 600 volts and with a fast switching speed. It has a frequency of up to 100 kHz and a ultra-high-speed (UHS) dv/dt of typically 900V//us. Its maximum power dissipation is 186 Watt and the typical collector-emitter saturation (Vce(sat)) is 1.2 V @ Ic=60A. It provides optimal performance in high efficiency switching applications and it is especially designed to handle high voltage and current requirements in a small footprint. It is designed with a lead-free package, including thermal, electrical and thermal cycling robustness features.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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