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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT August 2015 FGH60T65SHD 650 V, 60 A Field Stop Trench IGBT Features General Description o Maximum Junction Temperature : T =175 C Using novel field stop IGBT technology, Fairchilds new series of J rd field stop 3 generation IGBTs offer the optimum performance Positive Temperature Co-efficient for Easy Parallel Operating for solar inverter, UPS, welder, telecom, ESS and PFC applica- High Current Capability tions where low conduction and switching losses are essential. Low Saturation Voltage: V =1.6 V(Typ.) I = 60 A CE(sat) C 100% of the Parts Tested for I (1) LM Applications High Input Impedance Solar Inverter, UPS, Welder, Telecom, ESS, PFC Fast Switching Tighten Parameter Distribution RoHS Compliant C G G TO-247 C E E long leads Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGH60T65SHD F155 Unit V Collector to Emitter Voltage 650 V CES Gate to Emitter Voltage 20 V V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C 120 A C I C o Collector Current T = 100 C 60 A C o I Pulsed Collector Current T = 25 C 180 A LM (1) C I Pulsed Collector Current 180 A CM (2) o Diode Forward Current T = 25 C 60 A C I F o Diode Forward Current T = 100 C 30 A C I Pulsed Diode Maximum Forward Current 180 A FM (2) o Maximum Power Dissipation T = 25 C 349 W C P D o Maximum Power Dissipation T = 100 C 174 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1. V = 400 V, V = 15 V, I =180 A, R = 27 Inductive Load CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH60T65SHD Rev. 1.4