Product Information

RGTV60TK65GVC11

RGTV60TK65GVC11 electronic component of ROHM

Datasheet
IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.8139 ea
Line Total: USD 5.81

827 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
816 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 5.4625
10 : USD 4.6115
25 : USD 3.9445
100 : USD 3.864
250 : USD 3.3925
450 : USD 3.151
900 : USD 3.151
5400 : USD 3.0245

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Subcategory
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Additional Infomation About Product

RGTV60TK65 650V 30A Field Stop Trench IGBT Datasheet Outline TO-3PFM V 650V CES I 20A C (100) V 1.5V I =30A CE(sat) (Typ.) C P 76W D (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector 3) Short Circuit Withstand Time 2s (3) Emitter (1) 4) Pb - free Lead Plating RoHS Compliant (3) Applications Packaging Specifications Solar Inverter Packaging Tube UPS Reel Size (mm) - Welding Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 PFC Packing Code C11 RGTV60TK65 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 33 A C C Collector Current T = 100C I 20 A C C *1 Pulsed Collector Current 120 A I CP T = 25C P 76 W C D Power Dissipation T = 100C P 38 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T . jmax www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.10 - Rev.A 1/9Datasheet RGTV60TK65 Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance IGBT Junction - Case R - - 1.97 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 21.0mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.10 - Rev.A 2/9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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