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V = 10 V, DS(on) GS I = 3 A transistors are produced using Fairchilds proprietary, D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 16nC) technology has been especially tailored to minimize on- Low Crss (Typ. 15pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQB6N40C TM Unit V Drain-Source Voltage 400 V DSS I Drain Current - Continuous (T = 25C) 6 A D C - Continuous (T = 100C) 3.6 A C I Drain Current - Pulsed (Note 1) 24 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 270 mJ AS I (Note 1) Avalanche Current 6A AR E Repetitive Avalanche Energy (Note 1) 7.3 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 73 W D C - Derate above 25C 0.58 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB 6N40CTM Unit R Thermal Resistance, Junction to Case, Max. 1.71 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in pad of 2 oz copper), Max. 40 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB6N40C Rev. C0