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V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS I = 4.75 A D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 20 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce Low Crss (Typ. 40.5 pF) on-state resistance, and to provide superior switching 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP10N20C FQPF10N20C Unit V Drain to Source Voltage 200 V DSS o -Continuous (T = 25 C) 9.5 9.5 * A C I Drain Current D o -Continuous (T = 100 C) 6.0 6.0 * A C I Drain Current - Pulsed (Note 1) 38 38 * A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I Avalanche Current (Note 1) 9.5 A AR E Repetitive Avalanche Energy (Note 1) 7.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns o (T = 25 C) 72 38 W C P Power Dissipation D o - Derate above 25 C 0.57 0.3 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP10N20C FQPF10N20C Unit R Thermal Resistance, Junction to Case, Max 1.74 3.33 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP10N20C / FQPF10N20C Rev. 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