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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 20 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 155 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 95 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Fast Recovery Body Diode (Max. 250 ns) D G G D TO-264 S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQL40N50F Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25C) 40 A D C - Continuous (T = 100C) 25 A C I Drain Current - Pulsed (Note 1) 160 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I (Note 1) Avalanche Current 40 A AR E Repetitive Avalanche Energy (Note 1) 46 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (T = 25C) 460 W D C - Derate above 25C 3.7 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQL40N50F + Thermal Resistance, Junction-to-Case, Max. 0.27 6 + 6 Thermal Resistance, Junction-to-Ambient, Max. 30 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQL40N50F Rev. C1