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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQL40N50 N-Channel QFET MOSFET November 2013 FQL40N50 N-Channel QFET MOSFET 500 V, 40 A, 110 m Description Features This N-Channel enhancement mode power MOSFET is 40 A, 500 V, R = 110 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 20 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 155 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 95 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-264 S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQL40N50 Unit V Drain-Source Voltage 500 V DSS I - Continuous (T = 25C) Drain Current 40 A D C - Continuous (T = 100C) 25 A C I (Note 1) Drain Current - Pulsed 160 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1780 mJ AS I Avalanche Current (Note 1) 40 A AR E (Note 1) Repetitive Avalanche Energy 46 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 460 W D C - Derate above 25C 3.7 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQL40N50 + Thermal Resistance, Junction-to-Case, Max. 0.27 6 + 6 Thermal Resistance, Junction-to-Ambient, Max. 30 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQL40N50 Rev. C1