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V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS I = 9.5 A D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 40.5 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 85 pF) MOSFET technology has been especially tailored to reduce 100% Avalanche Tested on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D G S D TO-220 TO-220F S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP19N20C FQPF19N20C Unit V Drain to Source Voltage 200 V DSS o -Continuous (T = 25 C) 19.0 19.0 * A C I Drain Current D o -Continuous (T = 100 C) 12.1 12.1 * A C I Drain Current - Pulsed (Note 1) 76.0 76.0 * A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 433 mJ AS I Avalanche Current (Note 1) 19.0 A AR E Repetitive Avalanche Energy (Note 1) 13.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns o (T = 25 C) 139 43 W C P Power Dissipation D o - Derate above 25 C 1.11 0.34 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Unit FQP19N20C FQPF19N20C R Thermal Resistance, Junction to Case, Max 0.9 2.89 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP19N20C / FQPF19N20C Rev. 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