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FQP47P06 P-Channel QFET MOSFET April 2013 FQP47P06 P-Channel QFET MOSFET - 60 V, - 47 A, 26 m Description Features - 47 A, - 60 V, R = 26 m V = - 10 V, DS(on) GS This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconducto s proprietary I = - 23.5 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 84 nC) MOSFET technology has been especially tailored to Low Crss ( yp. 320 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched 175C Maximum Junction Temrature Rating. mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D TO-220 S D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP47P06 Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -47 A D C - Continuous (T = 100C) -33.2 A C I (Note 1) Drain Current - Pulsed -188 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 820 mJ AS I Avalanche Current (Note 1) -47 A AR E (Note 1) Repetitive Avalanche Energy 16 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns P Power Dissipation (T = 25C) 160 W D C - Derate above 25C 1.06 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQP47P06 R Thermal Resistance, Junction-to-Case, Max. C/W JC 0.94 R Thermal Resistance, Case-to-Sink, Typ. C/W CS 0.5 R Thermal Resistance, Junction-to-Ambient, Max. C/W JA 62.5 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com FQP47P06 Rev. C0