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V = 10 V, DS(on) GS transistors are produced using Fairchild s proprietary, I = 3.75 A D Low Gate Charge (Typ. 28 nC) planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- Low Crss (Typ. 12 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQPF8N60C Unit V Drain-Source Voltage 600 V DSS I - Continuous (T = 25C) Drain Current 7.5 * A D C - Continuous (T = 100C) 4.6 * A C I Drain Current - Pulsed (Note 1) 30 * A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 230 mJ AS I (Note 1) Avalanche Current 7.5 A AR E Repetitive Avalanche Energy (Note 1) 14.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 48 W D C - Derate above 25C 0.38 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQPF8N60C Unit R Thermal Resistance, Junction-to-Case, Max. 2.6 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF8N60C Rev. C0