Product Information

ISL9K3060G3

ISL9K3060G3 electronic component of ON Semiconductor

Datasheet
Diode: switching; THT; 600V; 2x30A; Package: tube; TO247-3; 36ns
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1
Multiples : 1

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ISL9K3060G3
ON Semiconductor

1 : USD 3.0013
10 : USD 3.0013
100 : USD 3.0013
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0 - WHS 2

MOQ : 1
Multiples : 1

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ISL9K3060G3
ON Semiconductor

1 : USD 2.9682
10 : USD 2.9089
100 : USD 2.9089
450 : USD 2.9089
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0 - WHS 3

MOQ : 450
Multiples : 450

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ISL9K3060G3
ON Semiconductor

450 : USD 1.433
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0 - WHS 4

MOQ : 900
Multiples : 900

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ISL9K3060G3
ON Semiconductor

900 : USD 1.619
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0 - WHS 5

MOQ : 222
Multiples : 222

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ISL9K3060G3
ON Semiconductor

222 : USD 1.9008
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0 - WHS 6

MOQ : 1
Multiples : 1

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ISL9K3060G3
ON Semiconductor

1 : USD 3.7694
10 : USD 3.2933
30 : USD 3.0086
90 : USD 2.7223
450 : USD 2.5897
900 : USD 2.5311
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0 - WHS 7

MOQ : 1
Multiples : 1

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ISL9K3060G3
ON Semiconductor

1 : USD 3.8985
10 : USD 3.5765
100 : USD 2.507
450 : USD 2.116
N/A

Obsolete
0 - WHS 8

MOQ : 1
Multiples : 1

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ISL9K3060G3
ON Semiconductor

1 : USD 5.1534
3 : USD 4.5612
5 : USD 3.7548
12 : USD 3.5532
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0 - WHS 9

MOQ : 3
Multiples : 1

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ISL9K3060G3
ON Semiconductor

3 : USD 3.0013
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0 - WHS 10

MOQ : 22
Multiples : 325

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ISL9K3060G3
ON Semiconductor

22 : USD 2.0582
500 : USD 1.8341
1000 : USD 1.7973
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Obsolete

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Packaging
Max Load Current
Capacitance
Category
Brand
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Additional Infomation About Product

STEALTH Dual Diode 60 A, 600 V ISL9K3060G3 Description The ISL9K3060G3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. www.onsemi.com The STEALTH family exhibits low reverse recovery current (I ) RR and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low CATHODE ANODE 2 (BOTTOM SIDE METAL) I and short ta phase reduce loss in switching transistors. The soft CATHODE RR ANODE 1 recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. TO2473LD CASE 340CK Features Stealth Recovery t = 36 ns ( I = 30 A) rr F K Max Forward Voltage, V = 2.4 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is PbFree and is RoHS Compliant A A 1 2 Applications Switch Mode Power Supplies MARKING DIAGRAM Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Y&Z&3&K K3060G3 Snubber Diode Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code K3060G3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: February, 2020 Rev. 3 ISL9K3060G3/DISL9K3060G3 DEVICE MAXIMUM RATINGS (per leg) (T = 25C unless otherwise noted) C Parameter Symbol Ratings Unit Repetitive Peak Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 125C) I 30 A C F(AV) Total Device Current (Both Legs) 60 A Repetitive Peak Surge Current (20 kHz Square Wave) I 70 A FRM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) I 325 A FSM Power Dissipation P 200 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to +175 C J, STG Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s T 260 C PKG Package Body for 10 s, See Techbrief TB334 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9K3060G3 K3060G3 TO2473L Tube N/A 30 THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance Junction to Case R 1.0 C/W JC Thermal Resistance Junction to Ambient TO247 30 C/W R JA www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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