MBD770DWT1G, NSVMBD770DW1T1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount www.onsemi.com package is excellent for hand held and portable applications where space is limited. Features 70 VOLTS SCHOTTKY Extremely Fast Switching Speed BARRIER DIODES Low Forward Voltage AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are PbFree, Halogen Free/BFR Free and are RoHS Anode 1 6 Cathode Compliant* N/C 2 5 N/C MAXIMUM RATINGS (T = 150C unless otherwise noted) J Cathode 3 4 Anode Rating Symbol Value Unit Forward Current I 100 mA F NonRepetitive Peak Forward Surge I 1 A FSM Current (60 Hz Half Sine) MARKING Reverse Voltage V 70 V R DIAGRAM Forward Power Dissipation P F 6 T = 25C 380 mW A Derate above 25C (Note 1) 3 mW/C SOT363 CASE 419B H5 M Operating Junction and Storage T T 55 to +150 C J, stg 1 STYLE 6 Temperature Range 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. 2 = PbFree Package 1. FR4 100 mm , 1 oz Cu (Note: Microdot may be in either location) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device Package Shipping MBD770DWT1G SOT363 3000 / (PbFree) Tape & Reel NSVMBD770DW1T1G SOT363 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 2 MBD770DW/DMBD770DWT1G, NSVMBD770DW1T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 70 R Total Capacitance C pF T (V = 20 V, f = 1.0 MHz) 1.0 R Reverse Leakage I nA R (V = 35 V) 200 R Forward Voltage V mV F (I = 1.0 mA) 500 F Forward Voltage V V F (I = 10 mA) 1.0 F 100 100000 150C 150C 55C 10000 125C 125C 100C 1000 10 100C 25C 75C 100 75C 10 25C 1 1 40C 0.1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 010 20 30 40 50 60 70 80 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 1.4 T = 25C A f = 1 MHz 1.2 1 0.8 0.6 0.4 0.2 0 010 20 30 40 50 60 V , REVERSE VOLTAGE (V) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T I , REVERSE CURRENT (nA) R