Product Information

MBRS1100T3G

MBRS1100T3G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 1A 100V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4089 ea
Line Total: USD 2.04

441 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
92 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

MBRS1100T3G
ON Semiconductor

5 : USD 0.4171
50 : USD 0.3417
150 : USD 0.3094
500 : USD 0.236
2500 : USD 0.218
5000 : USD 0.2072

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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Schottky Power Rectifier Surface Mount Power Package MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, www.onsemi.com SBRS81100N, SBRS8190N SCHOTTKY BARRIER Schottky Power Rectifiers employ the use of the Schottky Barrier RECTIFIER principle in a large area metal-to-silicon power diode. State-of-the-art 1.0 AMPERE geometry features epitaxial construction with oxide passivation and 90, 100 VOLTS metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: Features SMB CASE 403A Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction MARKING DIAGRAM High Blocking Voltage 100 Volts 175C Operating Junction Temperature AYWW Guardring for Stress Protection B1x AECQ101 Qualified and PPAP Capable These are PbFree Devices B1 = Device Code Mechanical Characteristics x = C for MBRS1100T3 Case: Epoxy, Molded 9 for MBRS190T3 A = Assembly Location** Weight: 95 mg (approximately) Y = Year Finish: All External Surfaces Corrosion Resistant and Terminal WW = Work Week Leads are Readily Solderable =PbFree Package Lead and Mounting Surface Temperature for Soldering Purposes: (Note: Microdot may be in either location) 260C Max. for 10 Seconds **The Assembly Location code (A) is front side Shipped in 12 mm Tape and Reel, 2,500 units per reel optional. In cases where the Assembly Location is stamped in the package, the front side assembly code Cathode Polarity Band may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2020 Rev. 15 MBRS1100T3/DMBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G, SBRS81100N, SBRS8190N MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R MBRS190T3 90 MBRS1100T3 100 Average Rectified Forward Current I A F(AV) T = 163C 1.0 L T = 148C 2.0 L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 50 Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change dv/dt 10 V/ns Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (T = 25C) R 22 C/W L JL ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (i = 1.0 A, T = 25C) V 0.75 V F J F Maximum Instantaneous Reverse Current (Note 2) I mA R (Rated dc Voltage, TJ = 25C) 0.5 (Rated dc Voltage, T = 100C) 5.0 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Marking Package Shipping MBRS1100T3G B1C SMB 2500 / Tape & Reel (PbFree) SBRS81100T3G* B1C SMB 2500 / Tape & Reel (PbFree) SBRS81100T3GVF01* B1C SMB 2500 / Tape & Reel (PbFree) MBRS190T3G B19 SMB 2500 / Tape & Reel (PbFree) SBRS8190T3G* B19 SMB 2500 / Tape & Reel (PbFree) SBRS81100NT3G* B1C SMB 2500 / Tape & Reel (PbFree) SBRS8190NT3G* B19 SMB 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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