MCH6103-TL-E ON Semiconductor

MCH6103-TL-E electronic component of ON Semiconductor
MCH6103-TL-E ON Semiconductor
MCH6103-TL-E Bipolar Transistors - BJT
MCH6103-TL-E Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MCH6103-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MCH6103-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MCH6103-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIP PNP 1A 50V
Datasheet: MCH6103-TL-E Datasheet (PDF)
Price (USD)
3000: USD 0.182 ea
Line Total: USD 546 
Availability : 0
  
QtyUnit Price
3000$ 0.182
6000$ 0.1801
9000$ 0.1784
12000$ 0.1767
15000$ 0.1749
21000$ 0.1731
24000$ 0.1714
30000$ 0.1696
75000$ 0.1679

 MCH6103-TL-E More Buying Options & Price Grid(s)
Availability 0
Ship by Mon. 13 Oct to Fri. 17 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.182
6000$ 0.1801
9000$ 0.1784
12000$ 0.1767
15000$ 0.1749
21000$ 0.1731
24000$ 0.1714
30000$ 0.1696
75000$ 0.1679

Availability 0
Ship by Thu. 09 Oct to Mon. 13 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6673
10$ 0.543
100$ 0.3428
500$ 0.258
1000$ 0.1939
3000$ 0.1593

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH6103-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6103-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

LOT No. LOT No. LOT No. LOT No. Ordering number : EN6611B MCH6103/MCH6203 Bipolar Transistor MCH6103/MCH6203 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)1.0 A C Collector Current (Pulse) I (--)3 A CP Base Current I 200 mA B 2 Collector Dissipation P When mounted on ceramic substrate (600mm 0.8mm) 1.0 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA 420 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)6 pF CB V (sat)1 I =(--)500mA, I =(--)10mA (--280)130 (--430)190 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)300mA, I =(--)6mA (--145)90 (--220)135 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)500mA, I =(--)10mA (--)0.81 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--50)80 V (BR)CBO C E V I =(--)100A, R =0 (--50)80 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)5 V (BR)EBO E C Turn-On Time t (36)38 ns on Storage Time t See speci ed Test Circuit. (173)332 ns stg Fall Time t (28)40 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 50 + + 100 F 470 F V = --5V V =25V BE CC I =20I = --20I =500mA C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH6103-TL-E MCPH6 3,000pcs./reel Pb Free MCH6203-TL-E MCPH6 3,000pcs./reel No.6611-2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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