MCH6103-TL-E ON Semiconductor

Name: MCH6103-TL-E
Brand: ON Semiconductor
SKU: MCH6103TLE_ON_Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

MCH6103-TL-E electronic component of ON Semiconductor

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MCH6103-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MCH6103-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.

MCH6103-TL-E

Manufacturer:

ON Semiconductor

Category:

Bipolar Transistors - BJT

Description:

Bipolar Transistors - BJT BIP PNP 1A 50V

Datasheet:

MCH6103-TL-E Datasheet (PDF)

Shipping Charges:

Click here for details

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Price (USD)

3000: USD 0.2022 ea
Line Total: USD 606.6

Availability : 0

Qty	Unit Price
3000	$ 0.2022
6000	$ 0.2001
9000	$ 0.1982
12000	$ 0.1963
15000	$ 0.1943
21000	$ 0.1924
24000	$ 0.1904
30000	$ 0.1884
75000	$ 0.1865

MCH6103-TL-E More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Thu. 25 Jun to Wed. 01 Jul

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2022
6000	$ 0.2001
9000	$ 0.1982
12000	$ 0.1963
15000	$ 0.1943
21000	$ 0.1924
24000	$ 0.1904
30000	$ 0.1884
75000	$ 0.1865

Availability0

Ship by Tue. 23 Jun to Thu. 25 Jun

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.7414
10	$ 0.6033
100	$ 0.3809
500	$ 0.2867
1000	$ 0.2154
3000	$ 0.177

We are delighted to provide the MCH6103-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6103-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

LOT No. LOT No. LOT No. LOT No. Ordering number : EN6611B MCH6103/MCH6203 Bipolar Transistor MCH6103/MCH6203 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)1.0 A C Collector Current (Pulse) I (--)3 A CP Base Current I 200 mA B 2 Collector Dissipation P When mounted on ceramic substrate (600mm 0.8mm) 1.0 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA 420 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)6 pF CB V (sat)1 I =(--)500mA, I =(--)10mA (--280)130 (--430)190 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)300mA, I =(--)6mA (--145)90 (--220)135 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)500mA, I =(--)10mA (--)0.81 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--50)80 V (BR)CBO C E V I =(--)100A, R =0 (--50)80 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)5 V (BR)EBO E C Turn-On Time t (36)38 ns on Storage Time t See speci ed Test Circuit. (173)332 ns stg Fall Time t (28)40 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 50 + + 100 F 470 F V = --5V V =25V BE CC I =20I = --20I =500mA C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH6103-TL-E MCPH6 3,000pcs./reel Pb Free MCH6203-TL-E MCPH6 3,000pcs./reel No.6611-2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Aptina / ON Semiconductormay also be referenced as

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FS8
FSC
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ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
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onsemi
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onsemi / Fairchild
OOF
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Manufacturer ON SemiconductorON Semiconductor
Product Category Bipolar Transistors - BJTBipolar Transistors - BJT
RoHS - XON YY
Mounting Style Smd/SmtSmd/Smt
Package / Case MCPH - 6MCPH - 6
Transistor Polarity PnpPnp
Collector- Emitter Voltage VCEO Max 50 V50 V
Emitter- Base Voltage VEBO 5 V5 V
Pd - Power Dissipation 1 W1 W
Series Mch6103Mch6103
Packaging Cut TapeCut Tape
Brand On SemiconductorOn Semiconductor
Continuous Collector Current 1 A1 A
Dc Collector/Base Gain Hfe Min 200200
Product Type Bjts - Bipolar TransistorsBjts - Bipolar Transistors
Factory Pack Quantity : 30003000
Subcategory TransistorsTransistors
Cnhts 85412100008541210000
Hts Code 85412900758541290075
Mxhts 8541210185412101
Taric 85412100008541210000