X-On Electronics has gained recognition as a prominent supplier of MCH6103-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MCH6103-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MCH6103-TL-E ON Semiconductor

MCH6103-TL-E electronic component of ON Semiconductor
MCH6103-TL-E ON Semiconductor
MCH6103-TL-E Bipolar Transistors - BJT
MCH6103-TL-E  Semiconductors

Images are for reference only
See Product Specifications
Part No. MCH6103-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIP PNP 1A 50V
Datasheet: MCH6103-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2458 ea
Line Total: USD 737.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 09 May to Thu. 15 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2458
6000 : USD 0.2451
9000 : USD 0.2445
12000 : USD 0.2439
15000 : USD 0.2434
24000 : USD 0.2428
30000 : USD 0.2421
75000 : USD 0.2415
150000 : USD 0.2408

0
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.6461
10 : USD 0.5258
100 : USD 0.332
500 : USD 0.2499
1000 : USD 0.1877
3000 : USD 0.1543

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH6103-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6103-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. LOT No. LOT No. Ordering number : EN6611B MCH6103/MCH6203 Bipolar Transistor MCH6103/MCH6203 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)1.0 A C Collector Current (Pulse) I (--)3 A CP Base Current I 200 mA B 2 Collector Dissipation P When mounted on ceramic substrate (600mm 0.8mm) 1.0 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA 420 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)6 pF CB V (sat)1 I =(--)500mA, I =(--)10mA (--280)130 (--430)190 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)300mA, I =(--)6mA (--145)90 (--220)135 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)500mA, I =(--)10mA (--)0.81 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--50)80 V (BR)CBO C E V I =(--)100A, R =0 (--50)80 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10 A, I =0A (--)5 V (BR)EBO E C Turn-On Time t (36)38 ns on Storage Time t See speci ed Test Circuit. (173)332 ns stg Fall Time t (28)40 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 50 + + 100 F 470 F V = --5V V =25V BE CC I =20I = --20I =500mA C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH6103-TL-E MCPH6 3,000pcs./reel Pb Free MCH6203-TL-E MCPH6 3,000pcs./reel No.6611-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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