LOTNo. LOTNo. MCH6320 Power MOSFET www.onsemi.com 12V, 70m , 3.5A, Single P-Channel Features V R (on) Max I DSS DS D Max 1.8V Drive 70m 4.5V High Speed Switching 12V 115m 2.5V 3.5A Pb-Free and RoHS Compliance 215m 1.8V Specifications Electrical Connection Absolute Maximum Ratings at Ta = 25C P-Channel Unit Parameter Symbol Value 1,2,5,6 Drain to Source Voltage V 12 V DSS Gate to Source Voltage V 10 V GSS Drain Current (DC) I 3.5 A D 1:Drain Drain Current (Pulse) 3 I 14 A DP 2:Drain PW10s, duty cycle1% 3:Gate Power Dissipation 4:Source 5:Drain When mounted on ceramic substrate P 1.5W D 6:Drain 4 2 (1200mm 0.8mm) C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 This product is designed to ESD immunity < 200V*, so please take care when handling. Packing Type : TL Marking * Machine Model Thermal Resistance Ratings JU Parameter Symbol Value Unit Junction to Ambient TL C/W When mounted on ceramic substrate R 83.3 JA 2 (1200mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 3 MCH6320/D MCH6320 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =6V, I =1mA 0.4 1.4 V GS DS D Forward Transconductance g V =6V, I =1.5A 2.7 4.5 S FS DS D R(on)1 I =1.5A, V =4.5V 54 70m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.8A, V =2.5V 80 115m DS D GS R(on)3 I =0.3A, V =1.8V 125 215m DS D GS Input Capacitance Ciss 405 pF Output Capacitance Coss V =6V, f=1MHz 145 pF DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 8.8 ns d Rise Time t 80 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 41 ns d Fall Time t 50 ns f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs V =6V, V =4.5V, I =3.5A 0.7 nC DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V I =3.5A, V=0V 0.86 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --6V DD IN 0V --4.5V I =--1.5A D V IN R =4 L D V OUT PW=10s D.C.1% G MCH6320 P.G 50 S www.onsemi.com 2