LOT No. LOT No. Ordering number : EN6458D MCH6601 P-Channel Power MOSFET MCH6601 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--100A --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--50mA 80 110 mS DS D R (on)1 I =--50mA, V =--4V 8 10.4 DS D GS Static Drain to Source On-State Resistance R (on)2 I =--30mA, V =--2.5V 11 15.4 DS D GS R (on)3 I =--1mA, V =--1.5V 27 54 DS D GS Input Capacitance Ciss 7.5 pF Output Capacitance Coss V =--10V, f=1MHz 5.7 pF DS Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 55 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 120 ns d Fall Time t 130 ns f Total Gate Charge Qg 1.43 nC Gate to Source Charge Qgs V =--10V, V =--10V, I =--100mA 0.18 nC DS GS D Gate to Drain Miller Charge Qgd 0.25 nC Diode Forward Voltage V I =--100mA, V =0V --0.83 --1.2 V SD S GS Switching Time Test Circuit V = --15V DD V IN I = --50mA D 0V R =300 L --4V D V OUT V IN PW=10 s D.C.1% G P.G 50 S MCH6601 Ordering Information Device Package Shipping memo MCH6601-TL-E MCPH6 3,000pcs./reel Pb-Free No.6458-2/6