X-On Electronics has gained recognition as a prominent supplier of MJE15031G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE15031G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE15031G ON Semiconductor

MJE15031G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJE15031G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 8A 150V 50W PNP
Datasheet: MJE15031G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1081 ea
Line Total: USD 2.11 
Availability - 2076
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2076
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1081
10 : USD 1.1716
100 : USD 1.0635
500 : USD 0.8371
700 : USD 0.7435

31
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.6423
10 : USD 1.2934
50 : USD 1.144
100 : USD 0.9574
500 : USD 0.8744
1000 : USD 0.8246

24229
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.794
10 : USD 1.0465
100 : USD 0.9476
500 : USD 0.7602
700 : USD 0.7544

116
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.82
10 : USD 1.582
14 : USD 1.33
37 : USD 1.26
100 : USD 1.218

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJE15031G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE15031G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 10 mAdc, I = 0) C B MJE15028, MJE15029 120 MJE15030, MJE15031 150 Collector Cutoff Current I mAdc CEO (V = 120 Vdc, I = 0) CE B MJE15028, MJE15029 0.1 (V = 150 Vdc, I = 0) CE B MJE15030, MJE15031 0.1 Collector Cutoff Current I Adc CBO (V = 120 Vdc, I = 0) CB E MJE15028, MJE15029 10 (V = 150 Vdc, I = 0) CB E MJE15030, MJE15031 10 Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 Adc, V = 2.0 Vdc) C CE 40 (I = 2.0 Adc, V = 2.0 Vdc) C CE 40 (I = 3.0 Adc, V = 2.0 Vdc) C CE 40 (I = 4.0 Adc, V = 2.0 Vdc) C CE 20 DC Current Gain Linearity h Typ FE (V From 2.0 V to 20 V, I From 0.1 A to 3 A) 2 CE C (NPN to PNP) 3 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) 0.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 500 mAdc, V = 10 Vdc, f = 10 MHz) 30 C CE test Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test T T A C 3.0 60 2.0 40 T C T 1.0 20 A 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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