MJL1302AG ON Semiconductor

MJL1302AG electronic component of ON Semiconductor
MJL1302AG ON Semiconductor
MJL1302AG Bipolar Transistors - BJT
MJL1302AG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MJL1302AG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJL1302AG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MJL1302AG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 15A 230V 200W PNP
Datasheet: MJL1302AG Datasheet (PDF)
Price (USD)
25: USD 2.7875 ea
Line Total: USD 69.69 
Availability : 1941
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
25$ 2.7875
100$ 2.7375
250$ 2.65
500$ 2.6125
1000$ 2.575
2500$ 2.5625
5000$ 2.55
7500$ 2.5375

Availability 1941
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 25
Multiples : 25
QtyUnit Price
25$ 2.7875
100$ 2.7375
250$ 2.65
500$ 2.6125
1000$ 2.575
2500$ 2.5625
5000$ 2.55
7500$ 2.5375


Availability 286
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.496
5$ 4.424
10$ 4.018


Availability 1940
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 75
Multiples : 25
QtyUnit Price
75$ 3.8475
100$ 3.6513
250$ 3.4006
500$ 3.3224
1000$ 3.2616


Availability 1479
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 75
Multiples : 25
QtyUnit Price
75$ 3.6512
100$ 2.8809
550$ 2.6136
5225$ 2.6122


Availability 776
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 75
Multiples : 25
QtyUnit Price
75$ 3.5919
100$ 2.8353
550$ 2.5725
5225$ 2.57

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJL1302AG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJL1302AG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJL3281A (NPN) MJL1302A (PNP) Complementary Bipolar Power Transistors Features MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 260 C B Collector Cutoff Current I Adc CBO (V = 260 Vdc, I = 0) 50 CB E Emitter Cutoff Current I Adc EBO (V = 5 Vdc, I = 0) 5 EB C SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4 CE (V = 100 Vdc, t = 1 s (nonrepetitive) 1 CE ON CHARACTERISTICS DC Current Gain h FE (I = 500 mAdc, V = 5 Vdc) 75 150 C CE (I = 1 Adc, V = 5 Vdc) 75 150 C CE (I = 3 Adc, V = 5 Vdc) 75 150 C CE (I = 5 Adc, V = 5 Vdc) 75 150 C CE (I = 8 Adc, V = 5 Vdc) 45 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 1 Adc) 3 C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1 Adc, V = 5 Vdc, f = 1 MHz) 30 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1 MHz) 600 CB E test

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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