X-On Electronics has gained recognition as a prominent supplier of MMBT2369ALT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2369ALT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT2369ALT1G ON Semiconductor

MMBT2369ALT1G electronic component of ON Semiconductor
MMBT2369ALT1G ON Semiconductor
MMBT2369ALT1G Bipolar Transistors - BJT
MMBT2369ALT1G  Semiconductors

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See Product Specifications
Part No. MMBT2369ALT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R
Datasheet: MMBT2369ALT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.028 ea
Line Total: USD 168 
Availability - 14550
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
14550
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.028
9000 : USD 0.0258
27000 : USD 0.0253
51000 : USD 0.024
102000 : USD 0.0236
150000 : USD 0.0234
252000 : USD 0.023
501000 : USD 0.0226

34028
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 1227
Multiples : 1
1227 : USD 0.2119
1961 : USD 0.1326
2104 : USD 0.1236
3160 : USD 0.0823
3200 : USD 0.0813
3945 : USD 0.0659
6558 : USD 0.0396
8033 : USD 0.0324
8621 : USD 0.0302
15000 : USD 0.0265
30000 : USD 0.0241

1736
Ship by Wed. 25 Jun to Mon. 30 Jun
MOQ : 10
Multiples : 10
10 : USD 0.0946
100 : USD 0.0764
300 : USD 0.0505
3000 : USD 0.0363
6000 : USD 0.0327
9000 : USD 0.0308

291
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 0.224
10 : USD 0.1302
25 : USD 0.1036
50 : USD 0.0882
75 : USD 0.0798

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT2369ALT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2369ALT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and MARKING PPAP Capable DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* SOT23 xxx M CASE 318 STYLE 6 MAXIMUM RATINGS 1 Rating Symbol Value Unit xxx = M1J or 1JA M = Date Code* Collector Emitter Voltage V 15 Vdc CEO = PbFree Package Collector Emitter Voltage V 40 Vdc CES (Note: Microdot may be in either location) Collector Base Voltage V 40 Vdc *Date Code orientation and/or overbar may CBO vary depending upon manufacturing location. Emitter Base Voltage V 4.5 Vdc EBO Collector Current Continuous I 200 mAdc C COLLECTOR THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P D 1 (Note 1) T = 25C 225 mW A BASE Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA 2 EMITTER Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MMBT2369LT1G SOT23 3,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MMBT2369LT3G SOT23 10,000 / (PbFree) Tape & Reel SMMBT2369LT1G SOT23 3,000 / (PbFree) Tape & Reel MMBT2369ALT1G SOT23 3,000 / (PbFree) Tape & Reel SMMBT2369ALT1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2018 Rev. 11 MMBT2369LT1/DMMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 15 C B Collector Emitter Breakdown Voltage V Vdc (BR)CES 40 (I = 10 Adc, V = 0) C BE Collector Base Breakdown Voltage V Vdc (BR)CBO 40 (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 4.5 E C Collector Cutoff Current I Adc CBO (V = 20 Vdc, I = 0) 0.4 CB E (V = 20 Vdc, I = 0, T = 150C) 30 CB E A Collector Cutoff Current I Adc CES MMBT2369A (V = 20 Vdc, V = 0) 0.4 CE BE ON CHARACTERISTICS DC Current Gain (Note 3) h FE MMBT2369 (I = 10 mAdc, V = 1.0 Vdc) 40 120 C CE MMBT2369A (I = 10 mAdc, V = 1.0 Vdc) 120 C CE MMBT2369A (I = 10 mAdc, V = 0.35 Vdc) 40 C CE MMBT2369A (I = 10 mAdc, V = 0.35 Vdc, T = 55C) 20 C CE A MMBT2369A (I = 30 mAdc, V = 0.4 Vdc) 30 C CE MMBT2369 (I = 100 mAdc, V = 2.0 Vdc) 20 C CE MMBT2369A (I = 100 mAdc, V = 1.0 Vdc) 20 C CE Collector Emitter Saturation Voltage (Note 3) V Vdc CE(sat) MMBT2369 (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B MMBT2369A (I = 10 mAdc, I = 1.0 mAdc) 0.20 C B MMBT2369A (I = 10 mAdc, I = 1.0 mAdc, T = +125C) 0.30 C B A MMBT2369A (I = 30 mAdc, I = 3.0 mAdc) 0.25 C B MMBT2369A (I = 100 mAdc, I = 10 mAdc) 0.50 C B Base Emitter Saturation Voltage (Note 3) V Vdc BE(sat) MMBT2369/A (I = 10 mAdc, I = 1.0 mAdc) 0.7 0.85 C B MMBT2369A (I = 10 mAdc, I = 1.0 mAdc, T = 55C) 1.02 C B A MMBT2369A (I = 30 mAdc, I = 3.0 mAdc) 1.15 C B MMBT2369A (I = 100 mAdc, I = 10 mAdc) 1.60 C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Small Signal CurrentGain h fe (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 5.0 C CE SWITCHING CHARACTERISTICS Storage Time t ns s (I = I = I = 10 mAdc) 5.0 13 B1 B2 C TurnOn Time t ns on (V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc) 8.0 12 CC C B1 TurnOff Time t ns off (V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc, I = 1.5 mAdc) 10 18 CC C B1 B2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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