MMBTA56LT1G ON Semiconductor

MMBTA56LT1G electronic component of ON Semiconductor
MMBTA56LT1G ON Semiconductor
MMBTA56LT1G Bipolar Transistors - BJT
MMBTA56LT1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of MMBTA56LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA56LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.MMBTA56LT1G
Manufacturer:ON Semiconductor
Category:Bipolar Transistors - BJT
Description:Bipolar Transistors - BJT 500mA 80V PNP
Datasheet:MMBTA56LT1G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
20: USD 0.0644 ea
Line Total: USD 1.29 
Availability : 39886
  
Ship by Tue. 23 Jun to Mon. 29 Jun
QtyUnit Price
20$ 0.0644
200$ 0.0504
600$ 0.0321
3000$ 0.0228
9000$ 0.0201
21000$ 0.0186
  

Availability545140
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0248
9000$ 0.024
27000$ 0.0231
51000$ 0.0225
102000$ 0.0224
150000$ 0.0224
252000$ 0.0223
501000$ 0.0223


Availability52380
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0364
9000$ 0.03


Availability25040
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 2017
Multiples : 1
QtyUnit Price
2017$ 0.1289
3328$ 0.0781
3362$ 0.0773
5465$ 0.0476
5495$ 0.0473
5748$ 0.0452
6043$ 0.043
6350$ 0.0409
6689$ 0.0388
15000$ 0.0353


Availability39886
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0644
200$ 0.0504
600$ 0.0321
3000$ 0.0228
9000$ 0.0201
21000$ 0.0186


Availability328830
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.032
9000$ 0.0305
27000$ 0.0277
51000$ 0.027
102000$ 0.0269


Availability61110
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0364
9000$ 0.03


Availability53941
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 9037
Multiples : 1
QtyUnit Price
9037$ 0.0519
10136$ 0.0463
100000$ 0.0388


Availability49470
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 9037
Multiples : 1
QtyUnit Price
9037$ 0.0519
10136$ 0.0463
100000$ 0.0388


Availability25040
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 5495
Multiples : 1
QtyUnit Price
5495$ 0.0473
5748$ 0.0452
6043$ 0.043
6350$ 0.0409
6689$ 0.0388
15000$ 0.0353

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTA56LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA56LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBTA56LT1G is an NPN small signal transistor from ON Semiconductor. It is designed for use in a wide range of general-purpose switching and amplification applications. This device is rated for a maximum current rating of 800 mA and a maximum collector-emitter voltage of 60 V. With a total power dissipation of 1 W and a maximum junction temperature of 150 °C, it is suited for operation across temperatures ranging from -65 °C to 150 °C. This component also features a high hFE of 2500 minimum at 250 mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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