MMBTA56LT1G ON Semiconductor

MMBTA56LT1G electronic component of ON Semiconductor
MMBTA56LT1G ON Semiconductor
MMBTA56LT1G Bipolar Transistors - BJT
MMBTA56LT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBTA56LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA56LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBTA56LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 80V PNP
Datasheet: MMBTA56LT1G Datasheet (PDF)
Price (USD)
12000: USD 0.0222 ea
Line Total: USD 266.4 
Availability : 1207650
  
Ship by Tue. 02 Dec to Mon. 08 Dec
QtyUnit Price
12000$ 0.0222
18000$ 0.0152

Availability 28840
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 1405
Multiples : 1
QtyUnit Price
1405$ 0.1851
2230$ 0.1166
2250$ 0.1155
3643$ 0.0714
3725$ 0.0698
5051$ 0.0515
5848$ 0.0445
10102$ 0.0258
10811$ 0.0241
15000$ 0.0225


Availability 1207650
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0222
18000$ 0.0152


Availability 11387
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.061
200$ 0.0478
600$ 0.0304
3000$ 0.0216
9000$ 0.019
21000$ 0.0177


Availability 1440
Ship by Fri. 28 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.126
10$ 0.1008
50$ 0.0633
100$ 0.0515
250$ 0.0406
500$ 0.035
714$ 0.0267
1961$ 0.0253
9000$ 0.0248


Availability 28937
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 3725
Multiples : 1
QtyUnit Price
3725$ 0.0698
5051$ 0.0515
5848$ 0.0445
10257$ 0.0253
10929$ 0.0238
15000$ 0.0222


Availability 1204740
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 18000
Multiples : 3000
QtyUnit Price
18000$ 0.0152


Availability 54320
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 9037
Multiples : 1
QtyUnit Price
9037$ 0.0518
10136$ 0.0462
100000$ 0.0387


Availability 49470
Ship by Tue. 02 Dec to Mon. 08 Dec
MOQ : 9037
Multiples : 1
QtyUnit Price
9037$ 0.0518
10136$ 0.0462
100000$ 0.0387

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTA56LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA56LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBTA56LT1G is an NPN small signal transistor from ON Semiconductor. It is designed for use in a wide range of general-purpose switching and amplification applications. This device is rated for a maximum current rating of 800 mA and a maximum collector-emitter voltage of 60 V. With a total power dissipation of 1 W and a maximum junction temperature of 150 °C, it is suited for operation across temperatures ranging from -65 °C to 150 °C. This component also features a high hFE of 2500 minimum at 250 mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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