X-On Electronics has gained recognition as a prominent supplier of MMBTA56LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA56LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTA56LT1G ON Semiconductor

MMBTA56LT1G electronic component of ON Semiconductor
MMBTA56LT1G ON Semiconductor
MMBTA56LT1G Bipolar Transistors - BJT
MMBTA56LT1G  Semiconductors

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See Product Specifications
Part No. MMBTA56LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 80V PNP
Datasheet: MMBTA56LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0226 ea
Line Total: USD 135.6 
Availability - 384120
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
384120
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 6000
Multiples : 3000
6000 : USD 0.0226
9000 : USD 0.0207
27000 : USD 0.0203
51000 : USD 0.0198
102000 : USD 0.0192
150000 : USD 0.0189
252000 : USD 0.0186
501000 : USD 0.0183

28937
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 2981
Multiples : 1
2981 : USD 0.0873
4025 : USD 0.0646
4049 : USD 0.0642
4229 : USD 0.0615
5989 : USD 0.0434
7353 : USD 0.0353
7435 : USD 0.035
8621 : USD 0.0302
11628 : USD 0.0224
12196 : USD 0.0213
15000 : USD 0.0192

2639370
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0389
9000 : USD 0.0325
24000 : USD 0.03
48000 : USD 0.0275
99000 : USD 0.0212

5917
Ship by Wed. 09 Jul to Mon. 14 Jul
MOQ : 20
Multiples : 20
20 : USD 0.0662
200 : USD 0.052
600 : USD 0.033
3000 : USD 0.0234
9000 : USD 0.0207
21000 : USD 0.0192

1410
Ship by Mon. 30 Jun to Wed. 02 Jul
MOQ : 1
Multiples : 1
1 : USD 0.196
10 : USD 0.112
50 : USD 0.0728
100 : USD 0.0602
500 : USD 0.0406

43650
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

55775
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

28937
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 7353
Multiples : 1
7353 : USD 0.0353

384120
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0292
12000 : USD 0.0264
27000 : USD 0.0245
51000 : USD 0.0239
102000 : USD 0.023

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the MMBTA56LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA56LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBTA56LT1G is an NPN small signal transistor from ON Semiconductor. It is designed for use in a wide range of general-purpose switching and amplification applications. This device is rated for a maximum current rating of 800 mA and a maximum collector-emitter voltage of 60 V. With a total power dissipation of 1 W and a maximum junction temperature of 150 °C, it is suited for operation across temperatures ranging from -65 °C to 150 °C. This component also features a high hFE of 2500 minimum at 250 mA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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