MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary NPN Type Available (MMDT5551) Case Material: Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- e3 Halogen and Antimony Free. Green Device (Note 3) 202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (approximate) SOT363 C1 C2 B1 B2 E1 E2 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMDT5401-7-F K4M 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMDT5401 Maximum Ratings T = +25C, unless otherwise specified.) A ( Characteristic Symbol Value Unit Collector-Base Voltage V -160 V CBO Collector-Emitter Voltage V -150 V CEO Emitter-Base Voltage -6 V V EBO Continuous Collector Current -200 mA I C Thermal Characteristics T = +25C, unless otherwise specified.) A ( Characteristic Symbol Value Unit (Note 5) 200 Power Dissipation mW P D (Notes 6 & 7) 320 (Note 5) 625 Thermal Resistance, Junction to Ambient R JA (Notes 6 & 7) 390 C/W Thermal Resistance, Junction to Case (Note 8) R 140 JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = +25C, unless otherwise specified.) ( A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage -160 V BV I = -100A, I = 0 CBO C E Collector-Emitter Breakdown Voltage (Note 9) -150 V BV I = -1mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV -6 V I = -100A, I = 0 EBO E C -50 nA V = -120V, I = 0 CB E Collector-Base Cutoff Current I CBO -50 A V = -120V, I = 0, T = +100C CB E A Base-Emitter Cutoff Current I -50 nA V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 9) 50 I = -1.0mA, V = -5.0V C CE DC Current Gain h 60 240 I = -10mA, V = -5.0V FE C CE 50 I = -50mA, V = -5.0V C CE -0.2 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(sat) -0.5 I = -50mA, I = -5.0mA C B I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V -1.0 V BE(sat) I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 6.0 pF V = -10V, f = 1.0MHz, I = 0 obo CB E Small Signal Current Gain h 40 200 I = -1mA, V = -10V, f = 1.0MHz fe C CE Current Gain-Bandwidth Product f 100 300 MHz I = -10mA, V = -10V, f = 100MHz T C CE V = -5.0V, I = -200A, CE C Noise Figure NF 8.0 dB R = 10 f = 1.0kHz S Notes: 5. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted 25mm X 25mm 2oz copper. 7. Maximum combined dissipation. 8. Thermal resistance from junction to the top of package. 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 April 2013 MMDT5401 Diodes Incorporated www.diodes.com Document Number: DS30169 Rev: 10 - 2 ADVANCE INFORMATION