TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers
May 2013
TIL111M, TIL117M, MOC8100M
General Purpose 6-Pin Phototransistor Optocouplers
Features General Description
UL Recognized (File # E90700) The MOC8100M, TIL111M, and TIL117M optocouplers
consist of a gallium arsenide infrared emitting diode
VDE Recognized (File #102497 for white package)
driving a silicon phototransistor in a 6-pin dual in-line
Add Option V (e.g., TIL111VM)
package.
Applications
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
Schematic Package Outlines
ANODE 1 6 BASE
CATHODE 2 5 COLLECTOR
4 EMITTER
NC 3
Figure 1. Schematic
Figure 2. Package Outlines
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.3TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC60747-5-2. This optocoupler is suitable for safe electrical insulation only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min.Typ.Max.Unit
Installation Classications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 V IIV
RMS
For Rated Mains Voltage < 300 V IIV
RMS
Climatic Classication 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
Input to Output Test Voltage, Method b,
V 1594
PR
V x 1.875 = V , 100% Production Test with
IORM PR
t
= 1 s, Partial Discharge < 5 pC
m
Input to Output Test Voltage, Method a, 1275
V x 1.5 = V , Type and Sample Test with
IORM PR
t = 60 s, Partial Discharge < 5 pC
m
Maximum Working Insulation Voltage 850 V
V
IORM peak
V Highest Allowable Over Voltage 6000 V
IOTM peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
9
R Insulation Resistance at T , V = 500 V 10
IO S IO
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIL111M, TIL117M, MOC8100M Rev. 1.0.3 2