MPS4124 Amplifier Transistor NPN Silicon Features PbFree Packages are Available* MPS4124 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mA, I = 0) 25 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 A, I = 0) 30 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 5.0 (I = 0, I = 10 A) C E Collector Cutoff Current I nAdc CBO (V = 20 V, I = 0) 50 CB E Emitter Cutoff Current I nAdc EBO (V = 3.0 V, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 2.0 mA, V = 1.0 V) 120 360 C CE (I = 50 mA, V = 1.0 V) 60 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mA, I = 5.0 mA) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 50 mA, I = 5.0 mA) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 20 V, f = 100 MHz) 170 C CE Output Capacitance C pF ob (V = 5.0 V, I = 0, f = 1.0 MHz) 4.0 CB E Input Capacitance C pF ib (V = 0.5 V, I = 0, f = 1.0 MHz) 13.5 EB C SmallSignal Current Gain h fe (I = 2.0 mA, V = 1.0 V, f = 1.0 kHz) 120 480 C CE Noise Figure NF dB (I = 100 A, V = 5.0 V, R = 1.0 k , f = 1.0 kHz) 5.0 C CE S