MTB30P06VT4G ON Semiconductor

MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts 2 PChannel D PAK This Power MOSFET is designed to withstand high energy in the MTB30P06V, MTBV30P06V ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V (BR)DSS (V = 0 Vdc, I = 0.25 mAdc) 60 Vdc GS D Temperature Coefficient (Positive) 62 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 10 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 100 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V GS(th) (V = V , I = 250 Adc) 2.0 2.6 4.0 Vdc DS GS D Threshold Temperature Coefficient (Negative) 5.3 mV/C Static DrainSource OnResistance (V = 10 Vdc, I = 15 Adc) R 0.067 0.08 GS D DS(on) DrainSource OnVoltage V Vdc DS(on) (V = 10 Vdc, I = 30 Adc) 2.0 2.9 GS D (V = 10 Vdc, I = 15 Adc, T = 150C) 2.8 GS D J Forward Transconductance g Mhos FS (V = 8.3 Vdc, I = 15 Adc) 5.0 7.9 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 1562 2190 pF iss Output Capacitance C 524 730 (V = 25 Vdc, V = 0 Vdc, f = 1.0 MHz) DS GS oss Transfer Capacitance C 154 310 rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 14.7 30 ns d(on) Rise Time t 25.9 50 r (V = 30 Vdc, I = 30 Adc, DD D V = 10 Vdc, R = 9.1 ) GS G Turn Off Delay Time t 98 200 d(off) Fall Time t 52.4 100 f Gate Charge Q 54 80 nC T (See Figure 8) Q 9.0 1 (V = 48 Vdc, I = 30 Adc, DS D V = 10 Vdc) GS Q 26 2 Q 20 3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V Vdc SD (I = 30 Adc, V = 0 Vdc) S GS 2.3 3.0 (I = 30 Adc, V = 0 Vdc, T = 150C) S GS J 1.9 Reverse Recovery Time t 175 ns rr t 107 a (I = 30 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) S t 68 b Reverse Recovery Stored Charge Q 0.965 C RR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L nH D (Measured from contact screw on tab to center of die) 3.5 (Measured from the drain lead 0.25 from package to center of die) 4.5 Internal Source Inductance L 7.5 nH S (Measured from the source lead 0.25 from package to source bond pad) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature.