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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field -30 A, -30 V. R = 0.042 V = -4.5 V DS(ON) GS effect transistors are produced using Fairchild s proprietary, R = 0.025 V = -10 V. DS(ON) GS high cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated process is especially tailored to minimize on-state resistance. temperature. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency Rugged internal source-drain diode can eliminate the need switching circuits where fast switching, low in-line power loss, for an external Zener diode transient suppressor. and resistance to transients are needed. High density cell design for extremely low R . DS(ON) 175C maximum junction temperature rating. S G D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter NDP6030PL NDB6030PL Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage - Continuous 16 V GSS I Drain Current - Continuous -30 A D - Pulsed -90 P Total Power Dissipation T = 25C 75 W D C Derate above 25C 0.5 Operating and Storage Temperature Range -65 to 175 C T ,T J STG T Maximum lead temperature for soldering purposes, 275 C L 1/8 from case for 5 seconds T ,T Operating and Storage Temperature Range -65 to 175 C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Case 2 C/W JC R Thermal Resistance, Junction-to-Ambient 62.5 C/W JA 1997 Fairchild Semiconductor Corporation NDP6030PL Rev.B1