DATA SHEET www.onsemi.com MOSFET - Dual P-Channel, D2 S1 D1 POWERTRENCH G2 S2 NDC7003P G1 TSOT23 6Lead CASE 419BL General Description These dual PChannel Enhancement Mode Power Field Effect Transistors are produced using onsemis proprietary Trench MARKING DIAGRAM Technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to XXX M low voltage applications requiring a low current high side switch. 1 Features 0.34 A, 60 V R = 5 V = 10 V DS(ON) GS XXX = Specific Device Code R = 7 V = 4.5 V DS(ON) GS M = Date Code Low Gate Charge = PbFree Package (Note: Microdot may be in either location) Fast Switching Speed High Performance Trench Technology for Low R DS(ON) SUPERSOT 6 Package: Small Footprint (72% smaller than PINOUT standard SO8) Low Profile (1 mm Thick) This is a PbFree Device 4 3 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 5 2 Symbol Parameter Ratings Unit V DrainSource Voltage 60 V 6 1 DSS V GateSource Voltage 20 V GSS I Drain Current A D SOT6 (SUPERSOT 6) Continuous (Note 1a) 0.34 Pulsed 1 P Power Dissipation for Single W D Operation ORDERING INFORMATION (Note 1a) 0.96 (Note 1b) 0.9 Package Shipping Device (Note 1c) 0.7 3000 / NDC7003P TSOT236 T , T Operating and Storage 55 to +150 C J STG (Pbfree) Tape & Reel Temperature Range For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RJA Thermal Resistance, 130 C/W Junction to Ambient (Note 1a) RJC Thermal Resistance, 60 Junction to Case (Note 1) Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: December, 2021 Rev. 3 NDC7003P/DNDC7003P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage I = 250 A, V = 0 V 60 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, Referenced to 25C 57 V DSS D T Coefficient J I Zero Gate Voltage Drain Current V = 48 V, V = 0 V 1 A DSS DS GS I GateBody Leakage, Forward V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.9 3.5 V GS(th) DS GS D V Gate Threshold Voltage Temperature I = 250 A, Referenced to 25C 3.2 mV/C GS(th) D Coefficient T J R Static DrainSource OnResistance V = 10 V, I = 0.34 A 1.2 5 DS(ON) GS D V = 4.5 V, I = 0.25 A 1.5 7.5 GS D V = 10 V, I = 0.34 A, T = 125C 1.9 10 GS D J I OnState Drain Current V = 10 V, V = 10 V 1 A D(on) GS DS g Forward Transconductance V = 10 V, I = 0.34 A 700 mS FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, f = 1.0 MHz 66 pF iss DS GS C Output Capacitance 13 oss C Reverse Transfer Capacitance 6 rss R Gate Resistance V = 15 mV, f = 1.0 MHz 11.2 G GS SWITCHING CHARACTERISTICS (Note 2) t TurnOn Delay Time V = 25 V, I = 1 A, V = 10 V, 3.2 6.4 ns d(on) DD D GS R = 6 GEN t TurnOn Rise Time 10 20 r t TurnOff Delay Time 8 16 d(off) t TurnOff Fall Time 1 2 f Q Total Gate Charge V = 25 V, I = 0.34 A, V = 10 V 1.6 2.2 nC DS D GS g Q GateSource Charge 0.3 gs Q GateDrain Charge 0.3 gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 0.34 A S V DrainSource Diode Forward Voltage V = 0 V, I = 0.34 A (Note 2) 0.8 1.4 V SD GS S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. R is the sum of the junctiontocase and casetoambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board design. JC CA 1a 1b 1c a) 130C/W when b) 140C/W when c) 180C/W when 2 2 mounted on a 0.125 in mounted on a 0.005 in mounted on a minimum pad of 2oz copper. pad of 2oz copper. pad. Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %. www.onsemi.com 2