SI2302DDS-T1-GE3 Vishay

SI2302DDS-T1-GE3 electronic component of Vishay
SI2302DDS-T1-GE3 Vishay
SI2302DDS-T1-GE3 MOSFETs
SI2302DDS-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2302DDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2302DDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2302DDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V Vds 8V Vgs SOT-23
Datasheet: SI2302DDS-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.2104 ea
Line Total: USD 1.05 
Availability : 12847
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
5$ 0.2104
50$ 0.1674
150$ 0.1094
500$ 0.0876
3000$ 0.0684
6000$ 0.0641

Availability 12847
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2104
50$ 0.1674
150$ 0.1094
500$ 0.0876
3000$ 0.0684
6000$ 0.0641


Availability 3297
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.49
10$ 0.4172
25$ 0.3696
100$ 0.2954
114$ 0.1666


Availability 2910
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1044

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2302DDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2302DDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2302DDS-T1-GE3 is a silicon carbide Schottky diode from the Vishay Semiconductor product line. It features fast switching with a soft recovery behavior, low leakage current and a very low forward voltage drop. The diode is optimized for high-temperature applications up to +175°C. It also offers an ultra-low thermal resistance (Rth) and a maximum current of 5A. The package is DPAK3 and the part is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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