SI2302DS,215

SI2302DS N-channel enhancement mode eld-effect transistor Rev. 02 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode eld-effect transistor in a plastic package using 1 TrenchMOS technology. Product availability: SI2302DS in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Battery management High speed switch Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplied outline and symbol Pin Description Simplied outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 Top view MSB003 SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.SI2302DS Philips Semiconductors N-channel enhancement mode eld-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit V drain-source voltage (DC) T =25to150 C - 20 V DS j I drain current (DC) T =25 C V = 4.5 V - 2.5 A D sp GS P total power dissipation T =25 C - 0.83 W tot sp T junction temperature - 150 C j R drain-source on-state resistance V = 4.5 V I=3.6A 5685m DSon GS D V = 2.5 V I = 3.1 A 77 115 m GS D 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) T =25to150 C - 20 V DS j V gate-source voltage (DC) -8V GS I drain current (DC) T =25 C V = 4.5 V Figure 2 and 3 - 2.5 A D sp GS T =70 C V = 4.5 V Figure 2 - 2A sp GS I peak drain current T =25 C pulsed t 10 s Figure 3 - 10 A DM sp p P total power dissipation T =25 C Figure 1 - 0.83 W tot sp T storage temperature - 65 +150 C stg T operating junction temperature - 65 +150 C j Source-drain diode I source (diode forward) current (DC) T =25 C - 0.7 A S sp 9397 750 09107 Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 02 20 November 2001 2 of 12