NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 Features 100% Avalanche Tested Gate Charge Minimized NDDL01N60Z, NDTL01N60Z ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I =1mA 600 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T Reference to 25C, I = 1 mA 610 mV/C (BR)DSS J D Temperature Coefficient DraintoSource Leakage Current I V = 600 V, V =0V T =25C 1 A DSS DS GS J T = 125C 50 J GatetoSource Leakage Current I V = 20 V 100 nA GSS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V =V , I =50 A 3 4.0 4.5 V GS(TH) DS GS D Negative Threshold Temperature Coef- V /T 9.6 mV/C GS(TH) J ficient Static Drain-to-Source On Resistance R V =10V, I = 0.4 A 12.2 15 DS(on) GS D Forward Transconductance g V =15V, I = 0.4 A 0.7 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCES Input Capacitance (Note 7) C 92 pF iss Output Capacitance (Note 7) C V =25V, V = 0 V, f = 1 MHz 13 oss DS GS Reverse Transfer Capacitance (Note 7) C 3 rss Effective output capacitance, energy C 5.5 pF o(er) V = 0 V, V = 0 to 480 V GS DS related (Note 9) Effective output capacitance, time C 8.1 I = constant, V = 0 V, o(tr) D GS related (Note 10) V = 0 to 480 V DS Total Gate Charge (Note 7) Q 4.9 nC g Gate-to-Source Charge (Note 7) Q 1.2 gs V = 300 V, I = 0.4 A, V =10V DS D GS Gate-to-Drain Charge (Note 7) Q 2.4 gd Plateau Voltage V 5.8 V GP Gate Resistance R 6.6 g SWITCHING CHARACTERISTICS (Note 8) Turn-on Delay Time t 10 ns d(on) Rise Time t 5 r V = 300 V, I = 0.4 A, DD D V =10V, R = 0 GS G Turn-off Delay Time t 13 d(off) Fall Time t 18 f DRAINSOURCE DIODE CHARACTERISTICS Diode Forward Voltage V T =25C 0.8 1.2 V SD J I = 0.4 A, V =0V S GS T = 100C 0.7 J Reverse Recovery Time t 183 ns rr Charge Time t 33 a V =0V, V =30V GS DD I = 1 A, d /d = 100 A/ s S i t Discharge Time t 150 b Reverse Recovery Charge Q 255 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Width 300 s, Duty Cycle 2%. 7. Guaranteed by design. 8. Switching characteristics are independent of operating junction temperatures. 9. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS 10.C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS