NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 3.6 A DSS DS(ON) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 500 V 0.85 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF08N50Z Unit D (2) DraintoSource Voltage V 500 V DSS Continuous Drain Current R (Note 1) I 8.5 A JC D Continuous Drain Current R I 5.4 A JC D T = 100C (Note 1) A G (1) Pulsed Drain Current, I 34 A DM V 10 V GS Power Dissipation P 35 W D S (3) GatetoSource Voltage V 30 V GS MARKING Single Pulse Avalanche Energy, I = E 190 mJ D AS 7.5 A DIAGRAM ESD (HBM) V 3500 V esd (JESD 22A114) RMS Isolation Voltage V 4500 V ISO NDF08N50ZG, (t = 0.3 sec., R.H. 30%, NDF08N50ZH T = 25C) (Figure 14) NDF08N50ZG A TO220FP or CASE 221AH Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns NDF08N50ZH AYWW MOSFET dV/dt dV/dt 60 V/ns Gate Source Continuous Source Current (Body I 7.5 A S Diode) Maximum Temperature for Soldering T 260 C L Leads Drain Operating Junction and T , T 55 to 150 C J stg A = Location Code Storage Temperature Range Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be G, H = PbFree, HalogenFree Package assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. I = 7.5 A, di/dt 100 A/ s, V BV , T = +150C SD DD DSS J ORDERING INFORMATION Device Package Shipping NDF08N50ZG TO220FP 50 Units / Rail (PbFree, HalogenFree) NDF08N50ZH TO220FP 50 Units / Rail (PbFree, HalogenFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 NDF08N50Z/DNDF08N50Z THERMAL RESISTANCE Parameter Symbol NDF08N50Z Unit JunctiontoCase (Drain) R 3.6 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 3. Insertion mounted ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 500 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, 0.6 V/C BV / DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 500 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 3.6 A R 0.69 0.85 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 3.75 A g 6.0 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 730 912 1095 pF iss Output Capacitance (Note 5) V = 25 V, V = 0 V, C 95 120 140 oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 15 27 35 rss (Note 5) Total Gate Charge (Note 5) Q 16 31 46 nC g GatetoSource Charge (Note 5) Q 3 6.2 9 gs V = 250 V, I = 7.5 A, DD D GatetoDrain (Miller) Charge Q 8 17 25 gd V = 10 V GS (Note 5) Plateau Voltage V 6.3 V GP Gate Resistance R 3.0 g RESISTIVE SWITCHING CHARACTERISTICS ns TurnOn Delay Time t 13 d(on) Rise Time t 23 r V = 250 V, I = 7.5 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 31 d(off) Fall Time t 29 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 7.5 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 295 ns rr V = 0 V, V = 30 V GS DD I = 7.5 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 1.85 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2