NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 3.5 A DSS DS(ON) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 600 V 0.95 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF08N60Z Unit D (2) DraintoSource Voltage V 600 V DSS Continuous Drain Current R (Note 1) I 8.4 A JC D Continuous Drain Current R I 5.3 A JC D T = 100C (Note 1) A G (1) Pulsed Drain Current, I 30 A DM V 10 V GS Power Dissipation P 36 W D S (3) GatetoSource Voltage V 30 V GS MARKING Single Pulse Avalanche Energy, E 235 mJ AS DIAGRAM I = 7.5 A D ESD (HBM) V 4000 V esd (JESD 22A114) RMS Isolation Voltage V 4500 V ISO NDF08N60ZG, (t = 0.3 sec., R.H. 30%, NDF08N60ZH NDF08N60ZG T = 25C) (Figure 14) A TO220FP or CASE 221AH Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns NDF08N60ZH AYWW Continuous Source Current (Body Diode) I 7.5 A S Gate Source Maximum Temperature for Soldering T 260 C L Leads Operating Junction and T , T 55 to 150 C J stg Storage Temperature Range Drain Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A = Location Code assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week 1. Limited by maximum junction temperature 2. I 7.5 A, di/dt 200 A/ s, V BV , T 150C. G, H = PbFree, HalogenFree Package D DD DSS J ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2013 Rev. 4 NDF08N60Z/DNDF08N60Z THERMAL RESISTANCE Parameter Symbol NDF08N60Z Unit JunctiontoCase (Drain) R 3.5 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA 3. Insertion mounted ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 600 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, 0.6 V/C BV / DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 600 V, V = 0 V DS GS 125C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 3.5 A R 0.82 0.95 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 3.5 A g 6.3 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 913 1140 1370 pF iss Output Capacitance (Note 5) V = 25 V, V = 0 V, C 105 129 160 oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 20 30 40 rss (Note 5) Total Gate Charge (Note 5) Q 20 39 58 nC g GatetoSource Charge (Note 5) Q 4 7.5 11.5 gs V = 300 V, I = 7.5 A, DD D GatetoDrain (Miller) Charge Q 10 21 31 gd V = 10 V GS (Note 5) Plateau Voltage V 6.2 V GP Gate Resistance R 1.6 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 14 ns d(on) Rise Time t 22 r V = 300 V, I = 7.5 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 36 d(off) Fall Time t 15 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 7.5 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 320 ns rr V = 0 V, V = 30 V GS DD I = 7.5 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 2.2 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2