NDF10N62Z N-Channel Power MOSFET 620 V, 0.75 Features Low ON Resistance Low Gate Charge NDF10N62Z THERMAL RESISTANCE Parameter Symbol NDF10N62Z Unit Junction toCase (Drain) R 3.4 C/W JC JunctiontoAmbient Steady State (Note 4) R 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 620 V GS D DSS Breakdown Voltage Temperature Reference to 25C, BV / 0.6 V/C DSS Coefficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 620 V, V = 0 V DS GS 125C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 5) Static DraintoSource V = 10 V, I = 5.0 A R 0.65 0.75 GS D DS(on) OnResistance Gate Threshold Voltage V = V , I = 100 A V 3.0 4.5 V DS GS D GS(th) Forward Transconductance V = 15 V, I = 10 A g 7.9 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 1425 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 150 oss f = 1.0 MHz Reverse Transfer Capacitance C 35 rss Total Gate Charge Q 47 nC g GatetoSource Charge Q 9.3 gs V = 310 V, I = 10 A, DD D V = 10 V GS GatetoDrain (Miller) Charge Q 25 gd Plateau Voltage V 6.4 V gp Gate Resistance R 1.5 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 15 ns d(on) Rise Time t 31 r V = 310 V, I = 10 A, DD D V = 10 V, R = 5 GS G Turn Off Delay Time t 40 d(off) Fall Time t 21 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 10 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 395 ns rr V = 0 V, V = 30 V GS DD I = 10 A, di/dt = 100 A/ s Reverse Recovery Charge S Q 3.0 C rr 4. Insertion mounted 5. Pulse Width 380 s, Duty Cycle 2%.