NDF11N50Z N-Channel Power MOSFET 500 V, 0.52 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 4.5 A DSS DS(ON) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 500 V Compliant 0.52 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C NChannel Rating Symbol NDF Unit D (2) DraintoSource Voltage V 500 V DSS Continuous Drain Current, R (Note 1) I 12 A JC D Continuous Drain Current I 7.4 A D T = 100C, R (Note 1) A JC G (1) Pulsed Drain Current, I 44 A DM t = 10 s P Power Dissipation, R P 39 W JC D S (3) GatetoSource Voltage V 30 V GS MARKING Single Pulse Avalanche E 420 mJ AS DIAGRAM Energy, I = 10 A D ESD (HBM) (JESD22A114) V 4000 V esd RMS Isolation Voltage V 4500 V ISO NDF11N50ZG (t = 0.3 sec., R.H. 30%, NDF11N50ZH T = 25C) (Figure 14) A TO220FP NDF11N50ZG Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns CASE 221AH or NDF11N50ZH MOSFET dV/dt dV/dt 60 V/ns AYWW Continuous Source Current (Body I 12 A S Gate Source Diode) Maximum Temperature for T 260 C L Soldering Leads Operating Junction and T , T 55 to 150 C Drain J stg Storage Temperature Range A = Location Code Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. G, H = PbFree, HalogenFree Package 1. Limited by maximum junction temperature 2. I 10.5 A, di/dt 200 A/ s, V BV , T 150C. d DD DSS J ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2015 Rev. 6 NDF11N50Z/DNDF11N50Z THERMAL RESISTANCE Parameter Symbol NDF11N50Z Unit JunctiontoCase (Drain) R 3.2 C/W JC JunctiontoAmbient Steady State (Note 3) R 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V = 0 V, I = 1 mA BV 500 V GS D DSS Breakdown Voltage Temperature Co- Reference to 25C, 0.6 V/C BV / DSS efficient I = 1 mA T D J DraintoSource Leakage Current 25C I 1 A DSS V = 500 V, V = 0 V DS GS 125C 50 GatetoSource Forward Leakage V = 20 V I 10 A GS GSS ON CHARACTERISTICS (Note 4) Static DraintoSource V = 10 V, I = 4.5 A R 0.48 0.52 GS D DS(on) OnResistance Gate Threshold Voltage V 3.0 3.9 4.5 V V = V , I = 100 A DS GS D GS(th) Forward Transconductance V = 15 V, I = 4.5 A g 7.7 S DS D FS DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) C 1097 1375 1645 pF iss Output Capacitance (Note 5) C 132 166 199 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 30 40 50 rss (Note 5) Total Gate Charge (Note 5) Q 23 46 69 nC g GatetoSource Charge (Note 5) Q 4.5 8.7 13 gs V = 250 V, I = 10.5 A, DD D GatetoDrain (Miller) Charge Q 12.5 25 37.5 gd V = 10 V GS (Note 5) Plateau Voltage V 6.2 V GP Gate Resistance R 1.4 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 15 ns d(on) Rise Time t 32 r V = 250 V, I = 10.5 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 40 d(off) Fall Time t 23 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage I = 10.5 A, V = 0 V V 1.6 V S GS SD Reverse Recovery Time t 310 ns rr V = 0 V, V = 30 V GS DD I = 10.5 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 2.5 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Insertion mounted 4. Pulse Width 380 s, Duty Cycle 2%. 5. Guaranteed by design. www.onsemi.com 2