March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. R = 0.023 V = -10 V DS(ON) GS transistors are produced using Fairchild s proprietary, high cell R = 0.035 V = -4.5V. DS(ON) GS density, DMOS technology. This very high density process is High density cell design for extremely low R DS(ON). especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are particularly surface mount package. suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 4 5 6 3 2 7 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS8435A Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous (Note 1a) -7.9 A D - Pulsed -25 P Maximum Power Dissipation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W R JA R Thermal Resistance, Junction-to-Case (Note 1) 25 C/W JC 1997 Fairchild Semiconductor Corporation NDS8435A Rev.C1Electrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = -250 A -30 V DSS GS D I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -1 A DSS DS GS T = 55C -10 A J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = -250 A -1 -1.3 -3 V GS(th) DS GS D T = 125C -0.7 -1 -2.2 J R Static Drain-Source On-Resistance V = -10 V, I = -7.9 A 0.02 0.023 DS(ON) GS D T = 125C 0.027 0.041 J V = -4.5 V, I = -6.5 A 0.03 0.035 GS D On-State Drain Current -25 A I V = -10 V, V = -5 V D(on) GS DS -10 V = -4.5, V = -5 V GS DS g Forward Transconductance V = -10 V, I = -7.9 A -17 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = -15 V, V = 0 V, 1800 pF iss DS GS f = 1.0 MHz Output Capacitance 950 pF C oss C Reverse Transfer Capacitance 240 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = -10 V, I = -1 A, 11 22 ns D(on) DD D V = -10 V, R = 6 GEN GEN t Turn - On Rise Time 20 35 ns r t Turn - Off Delay Time 95 180 ns D(off) t Turn - Off Fall Time 46 100 ns f Q Total Gate Charge V = -15 V, 48 67 nC g DS I = -7.9 A, V = -10 V D GS Q Gate-Source Charge 6 nC gs Gate-Drain Charge 12 nC Q gd NDS8435A Rev.C1