SI1016CX-T1-GE3 Vishay

Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFETs V (V) R ()I (A) Q (TYP.) DS DS(on) D g High-side switching 0.396 at V = 4.5 V 0.50 GS Ease in driving switches 0.456 at V = 2.5 V 0.20 GS N-Channel 20 0.75 nC 0.546 at V = 1.8 V 0.20 Low offset (error) voltage GS 0.760 at V = 1.5 V 0.05 GS Low-voltage operation 0.756 at V = -4.5 V -0.35 GS High-speed circuits 1.038 at V = -2.5 V -0.35 GS Typical ESD protection: P-Channel -20 1 nC 1.440 at V = -1.8 V -0.10 GS n-channel 900 V, p-channel 900 V (HBM) 2.400 at V = -1.5 V -0.05 GS 100 % R tested g Material categorization: for definitions of compliance SC-89 Dual (6 leads) please see www.vishay.com/doc 99912 S 2 4 G 2 APPLICATIONS 5 D 1 Load switch, small signal switches and level-shift 6 switches - Battery operated systems - Portable 3 D 2 2 D S 1 2 G 1 1 S 1 Top View G 1 G Marking Code: 5 2 Ordering Information: Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET N-Channel MOSFET D S 2 1 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V 20 -20 DS V Gate-Source Voltage V 8 GS a, b a, b T = 25 C 0.6 -0.6 A Continuous Drain Current (T = 150 C) I J D a, b a, b T = 70 C 0.49 -0.49 A A Pulsed Drain Current (t = 300 s) I 2-1.5 DM a, b a, b Source Drain Current Diode Current T = 25 C I 0.18 -0.18 A S a, b a, b T = 25 C 0.22 0.22 A Maximum Power Dissipation P W D a, b a, b T = 70 C 0.14 0.14 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. t 5 s 470 565 470 565 a, c Maximum Junction-to-Ambient R C/W thJA Steady State 560 675 560 675 Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 675 C/W. S14-1174-Rev. C, 09-Jun-14 Document Number: 67535 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1016CX www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V = 0 V, I = 250 A N-Ch 20 - - GS D Drain-Source Breakdown Voltage V V DS V = 0 V, I = -250 A P-Ch -20 - - GS D I = 250 A N-Ch - 17 - D V Temperature Coefficient V /T DS DS J I = -250 A P-Ch - -12 - D mV/C I = 250 A N-Ch - -1.8 - D V Temperature Coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 1.8 - D V = V , I = 250 A N-Ch 0.4 - 1 DS GS D Gate Threshold Voltage V V GS(th) V = V , I = -250 A P-Ch -0.4 - -1 DS GS D N-Ch - - 1 V = 0 V, V = 4.5 V DS GS P-Ch - - 1 Gate-Source Leakage I GSS N-Ch - - 30 V = 0 V, V = 8 V DS GS P-Ch - - 30 A V = 20 V, V = 0 V N-Ch - - 1 DS GS V = -20 V, V = 0 V P-Ch - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 55 C N-Ch - - 10 DS GS J V = -20 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V 5 V, V = 4.5 V N-Ch 2 - - DS GS b On-State Drain Current I A D(on) V -5 V, V = -4.5 V P-Ch -1.5 - - DS GS V = 4.5 V, I = 0.5 A N-Ch - 0.330 0.396 GS D V = -4.5 V, I = -0.35 A P-Ch - 0.630 0.756 GS D V = 2.5 V, I = 0.2 A N-Ch - 0.380 0.456 GS D V = -2.5 V, I = -0.35 A P-Ch - 0.865 1.038 GS D b Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 0.2 A N-Ch - 0.420 0.546 GS D V = -1.8 V, I = -0.1 A P-Ch - 1.200 1.440 GS D V = 1.5 V, I = 0.05 A N-Ch - 0.505 0.760 GS D V = -1.5 V, I = -0.05 A P-Ch - 1.600 2.400 GS D V = 10 V, I = 0.5 A N-Ch - 2 - DS D b Forward Transconductance g S fs V = -10 V, I = -3.6 A P-Ch - 1 - DS D N-Ch - 43 - Input Capacitance C iss P-Ch - 45 - N-Channel V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch - 14 - Output Capacitance C pF oss P-Ch - 15 - P-Channel V = -10 V, V = 0 V, f = 1 MHz N-Ch - 8 - DS GS Reverse Transfer Capacitance C rss P-Ch - 10 - a Dynamic V = 10 V, V = 4.5 V, I = 0.6 A N-Ch - 1.3 2 DS GS D V = -10 V, V = -4.5 V, I = -0.4 A P-Ch - 1.65 2.50 DS GS D Total Gate Charge Q g N-Ch - 0.75 1.2 P-Ch - 1 2 N-Channel nC V = 10 V, V = 2.5 V, I = 0.6 A DS GS D N-Ch - 0.15 - Gate-Source Charge Q gs P-Ch - 0.2 - P-Channel V = -10 V, V = -2.5 V, I = -0.4 A N-Ch - 0.13 - DS GS D Gate-Drain Charge Q gd P-Ch - 0.26 - N-Ch 2.4 12.2 24.4 Gate Resistance R f = 1 MHz g P-Ch 2.4 12 24 S14-1174-Rev. C, 09-Jun-14 Document Number: 67535 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000