X-On Electronics has gained recognition as a prominent supplier of NDS9952A MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDS9952A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDS9952A ON Semiconductor

NDS9952A electronic component of ON Semiconductor
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Part No.NDS9952A
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET SO-8 N&P-CH ENHANCE
Datasheet: NDS9952A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 1.4917
10 : USD 1.2083
100 : USD 0.9971
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MOQ : 2500
Multiples : 2500
2500 : USD 0.3027
5000 : USD 0.3027
7500 : USD 0.3027
10000 : USD 0.3027
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MOQ : 1
Multiples : 1
1 : USD 1.0904
10 : USD 0.8601
100 : USD 0.6753
500 : USD 0.5768
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MOQ : 1
Multiples : 1
1 : USD 0.3733
10 : USD 0.3657
30 : USD 0.3602
100 : USD 0.3564
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MOQ : 1
Multiples : 1
1 : USD 2.7967
10 : USD 0.9589
100 : USD 0.7102
500 : USD 0.6014
1000 : USD 0.4906
2500 : USD 0.4608
5000 : USD 0.4444
10000 : USD 0.4393
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MOQ : 152
Multiples : 152
152 : USD 0.5208
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152 : USD 0.5208
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152 : USD 0.4564
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2500 : USD 0.4891
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MOQ : 2500
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2500 : USD 0.4664
5000 : USD 0.3986
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2500 : USD 0.4371
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We are delighted to provide the NDS9952A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDS9952A and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, R =0.08 V =10V. field effect transistors are produced using ON DS(ON) GS Semiconductors proprietary, high cell density, DMOS P-Channel -2.9A, -30V, R =0.13 V =-10V. DS(ON) GS technology. This very high density process is especially High density cell design or extremely low R . DS(ON) tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in High power and current handling capability in a widely used the avalanche and commutation modes. These devices are surface mount package. particularly suited for low voltage applications such as notebook computer power management and other Dual (N & P-Channel) MOSFET in surface mount package. battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter N-Channel P-Channel Units V Drain-Source Voltage 30 -30 V DSS V Gate-Source Voltage 20 20 V GSS I Drain Current - Continuous (Note 1a) 3.7 2.9 A D - Pulsed 15 10 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC Publication Order Number: 1997 Semiconductor Components Industries, LLC. September-2017, Rev. 5 NDS9952A/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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