February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. R = 0.13 V = -10V. DS(ON) GS transistors are produced using Fairchild s proprietary, high High density cell design for extremely low R . cell density, DMOS technology. This very high density DS(ON) process is especially tailored to minimize on-state resistance, High power and current handling capability in a widely used provide superior switching performance, and withstand high surface mount package. energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage Dual MOSFET in surface mount package. applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS9953A Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage 20 V GSS Drain Current - Continuous (Note 1a) 2.9 A I D - Pulsed 10 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Temperature Range -55 to 150 C T ,T J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC 1997 Fairchild Semiconductor Corporation NDS9953A.SAMElectrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = -250 A -30 V DSS GS D I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -2 A DSS DS GS -25 A T = 55C J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS Gate - Body Leakage, Reverse -100 nA I V = -20 V, V = 0 V GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = -250 A -1 -1.6 -2.8 V GS(th) DS GS D T = 125C -0.85 -1.25 -2.5 J R Static Drain-Source On-Resistance V = -10 V, I = -1.0 A 0.11 0.13 DS(ON) GS D T = 125C 0.15 0.21 J V = -4.5 V, I = -0.5 A 0.17 0.2 GS D T = 125C 0.24 0.32 J I On-State Drain Current V = -10 V, V = -5 V -10 A D(on) GS DS V = -4.5 V, V = -5 V -1.5 GS DS g Forward Transconductance V = -15 V, I = -2.9 A 4 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = -10 V, V = 0 V, 350 pF iss DS GS f = 1.0 MHz C Output Capacitance 260 pF oss C Reverse Transfer Capacitance 100 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = -10 V, I = -1 A, 9 40 ns D(on) DD D V = -10 V, R = 6 GEN GEN t Turn - On Rise Time 21 40 ns r t Turn - Off Delay Time 21 90 ns D(off) t Turn - Off Fall Time 8 50 ns f Q Total Gate Charge V = -10 V, 10 25 nC g DS I = -2.9 A, V = -10 V D GS Gate-Source Charge 1.6 nC Q gs Q Gate-Drain Charge 3.4 nC gd NDS9953A.SAM