DATA SHEET www.onsemi.com IGBT - Field Stop II 50 A, 1200 V V = 2.20 V CEsat NGTB50N120FL2WG E = 1.40 mJ off This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. G Features Extremely Efficient Trench with Field Stop Technology E T = 175C Jmax Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 s Short Circuit Capability These are PbFree Devices G C Typical Applications E TO247 Solar Inverter CASE 340AM Uninterruptible Power Inverter Supplies (UPS) Welding MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter Voltage V 1200 V CES Collector Current I A C 50N120FL2 T = 25C 100 C AYWWG T = 100C 50 C Pulsed Collector Current, T I 200 A pulse CM Limited by T Jmax Diode Forward Current I A F T = 25C 100 C T = 100C 50 C 50N120FL2 = Specific Device Code Diode Pulsed Current, T Limited I 200 A pulse FM A = Assembly Location by T Jmax Y = Year Gateemitter Voltage V 20 V GE WW = Work Week Transient Gateemitter Voltage 30 G = PbFree Package (T = 5 s, D < 0.10) pulse Power Dissipation P W D T = 25C 535 C ORDERING INFORMATION T = 100C 267 C Short Circuit Withstand Time T 10 s SC Device Package Shipping V = 15 V, V = 500 V, T 150C GE CE J NGTB50N120FL2WG TO247 30 Units / Rail Operating Junction Temperature T 55 to +175 C J (PbFree) Range Storage Temperature Range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2021 Rev. 6 NGTB50N120FL2W/DNGTB50N120FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 2.20 2.40 V GE C CEsat V = 15 V, I = 50 A, T = 175C 2.60 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 7383 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 233 CE GE oes Reverse transfer capacitance C 139 res Gate charge total Q 311 nC g Gate to emitter charge V = 600 V, I = 50 A, V = 15 V Q 64 CE C GE ge Gate to collector charge Q 155 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 118 ns d(on) Rise time t 48 r Turnoff delay time T = 25C t 282 J d(off) V = 600 V, I = 50 A CC C Fall time t 113 f R = 10 g Turnon switching loss V = 0 V/ 15V E 4.40 mJ GE on Turnoff switching loss E 1.40 off Total switching loss E 5.80 ts Turnon delay time t 114 ns d(on) Rise time t 49 r Turnoff delay time T = 175C t 298 d(off) J V = 600 V, I = 50 A CC C Fall time t 243 f R = 10 g Turnon switching loss V = 0 V/ 15V E 5.65 mJ GE on Turnoff switching loss E 3.26 off Total switching loss E 8.91 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 2.00 2.60 V GE F F V = 0 V, I = 50 A, T = 175C 2.55 GE F J Reverse recovery time t 256 ns T = 25C J rr I = 50 A, V = 400 V F R Reverse recovery charge Q 2.7 c rr di /dt = 200 A/ s F Reverse recovery current I 19 A rrm Reverse recovery time T = 175C t 400 ns rr J I = 40 A, V = 400 V F R Reverse recovery charge Q 5.75 c rr di /dt = 200 A/ s F Reverse recovery current I 27 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2