NRTSV30H120CT Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage PIN CONNECTIONS Fast Switching with Exceptional Temperature Stability 1 Low Power Loss and Lower Operating Temperature 2, 4 Higher Efficiency for Achieving Regulatory Compliance 3 Low Thermal Resistance High Surge Capability 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Switching Power Supplies including Notebook / Netbook Adapters, TO220AB ATX and Flat Panel Display CASE 221A High Frequency and DCDC Converters STYLE 6 1 2 3 Freewheeling and ORing diodes Reverse Battery Protection Instrumentation MARKING DIAGRAM Mechanical Characteristics Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable AY WW TS30H120G Lead Temperature for Soldering Purposes: 260C Maximum for AKA 10 sec TS30H120G = Specific Device Code A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 1 NRTSV30H120CT/DNRTSV30H120CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 120 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 124C) Per device 30 R C (Rated V , T = 134C) Per diode 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 119C) Per device 60 R C (Rated V , Square Wave, 20 kHz, T = 132C) Per diode 30 R C Nonrepetitive Peak Surge Current I 125 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 55 to +150 C J Storage Temperature T 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance per Device (Note 1) JunctiontoCase R 1.0 C/W JC JunctiontoAmbient R 69.3 C/W JA 2 1. Assumes 150 mm 1 oz. copper bond pad, on a FR4 board. ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 7.5 A, T = 25C) 0.65 F J (I = 15 A, T = 25C) 0.87 0.93 F J (I = 7.5 A, T = 125C) 0.56 F J (I = 15 A, T = 125C) 0.66 0.70 F J Maximum Instantaneous Reverse Current (Note 2) I R (V = 90 V, T = 25C) 3.8 A R J (V = 90 V, T = 125C) 4.3 mA R J (Rated dc Voltage, T = 25C) 8.6 35 A J (Rated dc Voltage, T = 125C) 7.2 15 mA J Diode Capacitance C d (Rated dc Voltage, T = 25C) 95 pF J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping NRTSV30H120CTG TO220AB 50 Units / Rail (PbFree) www.onsemi.com 2