Product Information

NRVB0530T1G

NRVB0530T1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers , 0.5A, 30V SCHOTTK

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2168 ea
Line Total: USD 0.22

2714 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2714 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

NRVB0530T1G
ON Semiconductor

1 : USD 0.2168
10 : USD 0.2148
25 : USD 0.2072
100 : USD 0.11
250 : USD 0.1078
500 : USD 0.1078
1000 : USD 0.1078

2714 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 70
Multiples : 1

Stock Image

NRVB0530T1G
ON Semiconductor

70 : USD 0.2072
100 : USD 0.11
250 : USD 0.1078

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MBR0530, NRVB0530 Schottky Power Rectifier, Surface Mount 0.5 A, 30 V, SOD-123 Package The MBR0530 uses the Schottky Barrier principle with a large area MBR0530, NRVB0530 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 100C) 0.5 R L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 5.5 Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 65 to +125 C J Voltage Rate of Change (Rated V ) dv/dt 1000 V/ s R ESD Rating: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoAmbient (Note 1) R 206 C/W JA Thermal Resistance JunctiontoLead R 150 C/W JL 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 0.1 Amps, T = 25C) 0.375 F J (i = 0.5 Amps, T = 25C) 0.43 F J Maximum Instantaneous Reverse Current (Note 2) I A R (Rated DC Voltage, T = 25C) 130 C (V = 15 V, T = 25C) 20 R C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4 10 1 T = 125C J 1000 100 T = 125C 75C 25C - 40C J 75C 0.1 10 25C 1 0.01 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 1015 20 25 3035 40 v , INSTANTANEOUS VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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