X-On Electronics has gained recognition as a prominent supplier of NRVBB1060W1T4G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVBB1060W1T4G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

NRVBB1060W1T4G ON Semiconductor

NRVBB1060W1T4G electronic component of ON Semiconductor
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See Product Specifications
Part No. NRVBB1060W1T4G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 60 V 10 A SBR PIN1 N
Datasheet: NRVBB1060W1T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1600
Multiples : 800
1600 : USD 0.5709
2400 : USD 0.5245
4800 : USD 0.5112
N/A

Obsolete
0
MOQ : 1600
Multiples : 800
1600 : USD 0.4621
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.024
10 : USD 1.1363
100 : USD 0.8554
500 : USD 0.7268
800 : USD 0.5962
2400 : USD 0.5778
4800 : USD 0.5594
N/A

Obsolete
   
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We are delighted to provide the NRVBB1060W1T4G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVBB1060W1T4G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NRVBB1060, NRVBB1060W1 Switch-mode Power Rectifier This switchmode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This stateoftheart device www.onsemi.com has the following features: SCHOTTKY BARRIER Features RECTIFIER Low Forward Voltage 10 AMPERES, 60 VOLTS 175C Operating Junction Temperature Low Power Loss/High Efficiency 1 1 High Surge Capacity 4 4 3 3 For Automotive and Other Applications Requiring Unique Site and STYLE 3 STYLE 6 Control Change Requirements AECQ101 Qualified and PPAP Capable This is a PbFree Device 4 Applications 1 Power Supply Output Rectification 3 2 D PAK Power Management CASE 418B STYLE 3, 6 Mechanical Characteristics Case: Epoxy, Molded MARKING DIAGRAMS Epoxy Meets UL 94 V0 0.125 in Weight: 1.7 Grams (Approximately) AY WW AY WW Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable B1060G 1060W1G x K A x K A Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds NRVBB1060 NRVBB1060W1 A = Assembly Location Y = Year WW = Work Week G = PbFree Package xKA = Diode Polarity x = N or A ORDERING INFORMATION Device Package Shipping 2 NRVBB1060T4G D PAK 800/Tape & Reel (PbFree) 2 NRVBB1060W1T4G D PAK 800/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 Rev. 3 NRVBB1060/DNRVBB1060, NRVBB1060W1 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Rated V ) T = 133C I 10 A R C F(AV) Peak Repetitive Forward Current I 20 A FRM (Rated V , Square Wave, 20 kHz) T = 133C R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Maximum Thermal Resistance, JunctiontoCase R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient R 60 C/W JA ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.7 F C (i = 10 Amps, T = 25C) 0.8 F C (i = 20 Amps, T = 125C) 0.85 F C (i = 20 Amps, T = 25C) 0.95 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 25 C (Rated dc Voltage, T = 25C) 0.10 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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