NSS30070MR6T1G 30 V, 0.7 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS30070MR6T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Breakdown Voltage (I = 100 A) V 40 V C (BR)CBO CollectorEmitter Breakdown Voltage (I = 10 mA) V 30 V C (BR)CEO EmitterBase Breakdown Voltage (I = 100 A) V 5.0 V E (BR)EBO Collector Cutoff Current (V = 25 V, I = 0 A) I 1.0 A CB E CBO (V = 25 V, I = 0 A, T = 125C) 10 CB E A Emitter Cutoff Current (V = 5.0 V, I = 0 A) I 10 A EB C EBO ON CHARACTERISTICS DC Current Gain (V = 3.0 V, I = 100 mA) h 150 V CE C FE CollectorEmitter Saturation Voltage (I = 500 mA, I = 50 mA) V 0.25 V C B CE(sat) CollectorEmitter Saturation Voltage (I = 700 mA, I = 70 mA) V 0.4 V C B CE(sat) BaseEmitter Saturation Voltage (I = 700 mA, I = 70 mA) V 1.1 V C B BE(sat) BaseEmitter TurnOn Voltage (I = 700 mA, V = 1.0 V) V 1.0 V C CE BE(on) 0.5 0.2 0.5 A 0.4 0.15 0.3 0.7 A 0.1 0.2 0.5 A 0.1 A 10 mA 0.05 0.1 A 0.1 10 mA I = 1.0 mA I = 1.0 mA C C 0 0 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 I , BASE CURRENT (A) I , BASE CURRENT (A) B B Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 1.0 V BE(sat) V = 3.0 V CE 150C 0.1 25C -40C V CE(sat) I /I = 10 C B 100 0.01 0.01 0.1 1.0 0.001 0.01 0.1 1.0 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 3. DC Current Gain Figure 4. SAT Voltages