NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS www.onsemi.com Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications. ELECTRICAL CONNECTION Features N-Channel High Forward Transfer Admittance High Breakdown Voltage 3 Low Input Capacitance Low Noise Figure 1 : Source Pb-Free and RoHS compliance 2 : Drain AEC-Q101 qualified and PPAP capable 3 : Gate 1 2 Typical Applications Low Noise Amplifier for Automotive AM Radio 3 SPECIFICATIONS 1 ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) 2 CPH3 Parameter Symbol Value Unit V Drain-to-Source Voltage 25 V DSX V Gate-to-Drain Voltage V GDS 25 I Gate Current 10 mA G MARKING I Drain Current 50 mA D P Allowable Power Dissipation 400 mW D Operating Junction and T T 55 to 150 C J, stg Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 0 NSVJ3910SB3/D NSVJ3910SB3 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max V Gate-to-Drain Breakdown Voltage I = 10 A, V = 0V V (BR)GDS 25 G DS I V = 10V, V = 0V Gate Cutoff Current 1.0 nA GSS GS DS V V = 5V, I = 100 A Cutoff Voltage 0.6 1.2 1.8 V GS(off) DS D I V = 5V, V = 0V Drain Current 20 40 mA DSS DS GS Forward Transfer Admittance yfs V = 5V, V = 0V, f = 1kHz 30 40 mS DS GS Input Capacitance Ciss 6.0 pF V = 5V, V = 0V, f = 1MHz DS GS Reverse Transfer Capacitance Crss 2.3 pF V = 5V, V = 0V f = 100MHz Noise Figure NF 2.1 2.8 dB DS GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2