Schottky Barrier Diode NSVR02HL40MX2W Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSVR02HL40MX2W in a X2DFNW2 (0402) miniature package enables designers to meet the challenging task of achieving higher www.onsemi.com efficiency and meeting reduced space requirements. 40 V SCHOTTKY Features BARRIER DIODE Low Forward Voltage Drop Low Reverse Current Very High Switching Speed 1 2 CATHODE ANODE 175C T Rated for High Temperature, Mission Critical J(max) Applications Small Body Outline Dimensions: MARKING 0.039 x 0.024 (1.00 mm x 0.60 mm) DIAGRAM Low Body Height: 0.016 (0.40 mm) Wettable Flank Package for optimal Automated Optical Inspection X2DFNW2 XXM (AOI) CASE 711BG NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 XX = Specific Device Code Qualified and PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Typical Applications Device Package Shipping Buck and Boost dcdc Converters Reverse Voltage and Current Protection NSVR02HL40MX2WT5G X2DFNW2 8000 / Tape (PbFree) & Reel Clamping & Protection For information on tape and reel specifications, including part orientation and tape sizes, please MAXIMUM RATINGS refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. Reverse Voltage V 40 V R Forward Current (DC) I 200 mA F NonRepetitive Peak Forward Surge Current I 2.0 A FSM ESD Rating: Human Body Model ESD Class 1C Machine Model Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2021 Rev. 0 NSVR02HL40MX2W/DNSVR02HL40MX2W THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 400 C/W JA Thermal Resistance JunctiontoSolder Point (Note 1) R 100 C/W JSP Junction and Storage Temperature Range T , T 55 to +175 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 25 V) 0.03 0.1 R (V = 40 V) 0.04 0.5 R (V = 30 V, T = 150C) 150 200 R J (V = 40 V, T = 150C) 200 500 R J Forward Voltage V V F (I = 1 mA) 0.32 0.38 F (I = 10 mA) 0.43 0.50 F (I = 40 mA) 0.62 0.80 F (I = 100 mA) 1.20 F Total Capacitance pF CT (V = 1.0 V, f = 1 MHz) 2.0 5.0 R Reverse Recovery Time t ns RR (I = I = 10 mA, I = 1.0 mA) 1.5 4.0 F R R DC Current Source + t t r p 0.1 F 0 V 10% I F 90% 750 H V R Pulse Generator 0.1 F Output 50 Output Pulse Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. IR(REC) is measured at 1 mA. Typically 0.1 X I or 0.25 X I . RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2