NTB5405NT4G ON Semiconductor

NTB5405N, NVB5405N MOSFET Power, Single, 2 N-Channel, D PAK 40 V, 116 A Features NTB5405N, NVB5405N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 39 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 40 V DS T = 100C 10 J GatetoSource Leakage Current I V = 0 V, V = 30 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 V GS(TH) GS DS D Gate Threshold Temperature V /T 7.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 40 A 4.9 5.8 m DS(on) GS D V = 5.0 V, I = 15 A 7.0 8.0 GS D Forward Transconductance g V = 10 V, I = 15 A 32 S FS GS D CHARGES AND CAPACITANCES Input Capacitance C 2700 4000 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 700 1400 OSS V = 32 V DS Reverse Transfer Capacitance C 300 600 RSS Total Gate Charge Q 88 nC G(TOT) Threshold Gate Charge Q 3.25 G(TH) V = 10 V, V = 32 V, GS DS I = 40 A D GatetoSource Charge Q 9.5 GS GatetoDrain Charge Q 37 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 8.5 ns d(ON) Rise Time t 52 r V = 10 V, V = 32 V, GS DD I = 40 A, R = 2.5 D G TurnOff Delay Time t 55 d(OFF) Fall Time t 70 f SWITCHING CHARACTERISTICS, V = 5 V (Note 3) GS TurnOn Delay Time t 19 ns d(ON) Rise Time t 153 r V = 5 V, V = 20 V, GS DD I = 20 A, R = 2.5 D G TurnOff Delay Time t 32 d(OFF) Fall Time t 42 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.82 1.1 V SD J V = 0 V, GS I = 20 A S T = 100C TBD J Reverse Recovery Time t 66 ns RR Charge Time t 35 a V = 0 V, dI /dt = 100 A/ s, GS SD I = 20 A Discharge Time t S 31 b Reverse Recovery Charge Q 113 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.