NTD4858NT4G ON Semiconductor

NTD4858N MOSFET Power, Single, N-Channel, DPAK/IPAK 25 V, 73 A Features NTD4858N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.75 C/W JC JunctiontoTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 1) R 73.5 JA JunctiontoAmbient Steady State (Note 2) R 116 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 25 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 22 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 20 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.3 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 5.2 6.2 DS(on) GS D m V = 4.5 V I = 30 A 7.3 9.3 GS D Forward Transconductance g V = 1.5 V, I = 15 A 55 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1563 ISS Output Capacitance C 405 V = 0 V, f = 1.0 MHz, V = 12 V pF OSS GS DS Reverse Transfer Capacitance C 200 RSS Total Gate Charge Q 12.8 19.2 G(TOT) Threshold Gate Charge Q 1.3 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 4.7 GS GatetoDrain Charge Q 5.2 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 25.7 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12.6 d(ON) Rise Time t 20.2 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 16.4 d(OFF) Fall Time t 5.1 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.