Product Information

NTD4960NT4G

NTD4960NT4G electronic component of ON Semiconductor

Datasheet
Trans MOSFET N-CH 30V 11.1A 3-Pin(2+Tab) DPAK T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

534: USD 0.3138 ea
Line Total: USD 167.57

0 - Global Stock
MOQ: 534  Multiples: 534
Pack Size: 534
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 2500
Multiples : 2500

Stock Image

NTD4960NT4G
ON Semiconductor

2500 : USD 0.3138

0 - WHS 2


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 534
Multiples : 534

Stock Image

NTD4960NT4G
ON Semiconductor

534 : USD 0.3138

     
Manufacturer
Product Category
Packaging
Channel Mode
Mounting
Operating Temp Range
Pin Count
Power Dissipation
Number Of Elements
Continuous Drain Current
Package Type
Operating Temperature Classification
Gate-Source Voltage Max
Rad Hardened
Polarity
Type
Drain-Source On-Volt
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NTD4960N Power MOSFET 30 V, 55 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4960N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 3 C/W  JC Junction toTAB (Drain) R 3.5 JCTAB JunctiontoAmbient Steady State (Note 1) R 74.5 JA JunctiontoAmbient Steady State (Note 2) R 116.5 JA 1. Surfacemounted on FR4 board using 1 sq in pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 25 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.0 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 6.1 8.0 m DS(on) GS D I = 15 A 6.1 D V = 4.5 V I = 30 A 10 12.7 m GS D I = 15 A 10 D Forward Transconductance g V = 1.5 V, I = 15 A 48 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1300 ISS Output Capacitance C 342 V = 0 V, f = 1.0 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 169 RSS Total Gate Charge Q 11 G(TOT) Threshold Gate Charge Q 1.2 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 4.0 GS GatetoDrain Charge Q 4.7 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 22 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12 d(ON) Rise Time t 20 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0  D G Turn Off Delay Time t 15 d(OFF) Fall Time t 4.0 f 3. Pulse Test: pulse width  300 s, duty cycle  2%. 4. Switching characteristics are independent of operating junction temperatures. 5. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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