Product Information

NTD6415ANT4G

NTD6415ANT4G electronic component of ON Semiconductor

Datasheet
MOSFET NFET DPAK 100V 25A 55MO

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.5794 ea
Line Total: USD 1448.5

0 - Global Stock
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 2500
Multiples : 2500

Stock Image

NTD6415ANT4G
ON Semiconductor

2500 : USD 1.5805

0 - WHS 2


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 2500
Multiples : 1

Stock Image

NTD6415ANT4G
ON Semiconductor

2500 : USD 0.5794

0 - WHS 3


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 584
Multiples : 584

Stock Image

NTD6415ANT4G
ON Semiconductor

584 : USD 1.5805

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 m Features Low R DS(on) High Current Capability NTD6415AN, NVD6415AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 113 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.6 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 23 A 47 55 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 13 S FS GS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 700 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110 OSS GS DS Reverse Transfer Capacitance C 52 RSS Total Gate Charge Q 29 nC G(TOT) Threshold Gate Charge Q 1.2 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 23 A 5 GS GS DS D GatetoDrain Charge Q 14.6 GD Plateau Voltage V 5.7 V GP Gate Resistance R 2.3 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 10 ns d(on) Rise Time t 37 r V = 10 V, V = 80 V, GS DD I = 23 A, R = 6.1 Turn Off Delay Time t D G 30 d(off) Fall Time t 37 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.68 J Reverse Recovery Time t 65 ns RR Charge Time T 46 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 19 b Reverse Recovery Charge Q 176 nC RR 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD6415ANT4G DPAK 2500 / Tape & Reel (Pb Free) NTD6415AN 1G IPAK 75 Units / Rail (Pb Free) NVD6415ANT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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