NTD6415ANT4G ON Semiconductor

NTD6415ANT4G electronic component of ON Semiconductor
NTD6415ANT4G ON Semiconductor
NTD6415ANT4G MOSFETs
NTD6415ANT4G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTD6415ANT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD6415ANT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTD6415ANT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET DPAK 100V 25A 55MO
Datasheet: NTD6415ANT4G Datasheet (PDF)
Price (USD)
2500: USD 0.5616 ea
Line Total: USD 1404 
Availability : 0
  
QtyUnit Price
2500$ 0.5616

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 1.5318


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2500
Multiples : 1
QtyUnit Price
2500$ 0.5616


Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 584
Multiples : 584
QtyUnit Price
584$ 1.5318

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD6415ANT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD6415ANT4G and other electronic components in the MOSFETs category and beyond.

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NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 m Features Low R DS(on) High Current Capability NTD6415AN, NVD6415AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 113 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.6 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 23 A 47 55 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 13 S FS GS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 700 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110 OSS GS DS Reverse Transfer Capacitance C 52 RSS Total Gate Charge Q 29 nC G(TOT) Threshold Gate Charge Q 1.2 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 23 A 5 GS GS DS D GatetoDrain Charge Q 14.6 GD Plateau Voltage V 5.7 V GP Gate Resistance R 2.3 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 10 ns d(on) Rise Time t 37 r V = 10 V, V = 80 V, GS DD I = 23 A, R = 6.1 Turn Off Delay Time t D G 30 d(off) Fall Time t 37 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.68 J Reverse Recovery Time t 65 ns RR Charge Time T 46 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 19 b Reverse Recovery Charge Q 176 nC RR 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD6415ANT4G DPAK 2500 / Tape & Reel (Pb Free) NTD6415AN 1G IPAK 75 Units / Rail (Pb Free) NVD6415ANT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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