NTD6416ANL, NVD6416ANL MOSFET Power, N-Channel 100 V, 19 A, 74 m Features www.onsemi.com Low R DS(on) High Current Capability V R MAX I MAX (BR)DSS DS(on) D 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring 100 V 74 m 10 V 19 A Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable D These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J G Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS S GatetoSource Voltage Continuous V 20 V GS 4 Continuous Drain Steady T = 25C I 19 A C D Current State 4 T = 100C 13 C Power Dissipation Steady T = 25C P 71 W 1 C D 2 1 State 2 3 3 Pulsed Drain Current t = 10 s I 70 A p DM DPAK IPAK CASE 369AA CASE 369D Operating and Storage Temperature Range T , T 55 to C J stg STYLE 2 STYLE 2 +175 Source Current (Body Diode) I 19 A S MARKING DIAGRAM & PIN ASSIGNMENTS Single Pulse DraintoSource Avalanche E 50 mJ AS Energy (V = 50 Vdc, V = 10 Vdc, DD GS 4 Drain 4 Drain I = 18.2 A, L = 0.3 mH, R = 25 ) L(pk) G Lead Temperature for Soldering T 260 C L Purposes, 1/8 from Case for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 3 assumed, damage may occur and reliability may be affected. 2 Gate Source 1 3 Drain Gate Source THERMAL RESISTANCE RATINGS 2 Drain Parameter Symbol Max Unit A = Assembly Location* JunctiontoCase (Drain) Steady State 2.1 C/W R JC Y = Year JunctiontoAmbient Steady State (Note 1) R 47 JA WW = Work Week 6416ANL = Device Code 1. Surface mounted on FR4 board using 1 sq in pad size, G = PbFree Package (Cu Area 1.127 sq in 2 oz including traces). * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 6 NTD6416ANL/D AYWW 64 16ANLG AYWW 64 16ANLGNTD6416ANL, NVD6416ANL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 120 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.0 2.2 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.4 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 4.5 V, I = 10 A 70 80 m DS(on) GS D V = 10 V, I = 10 A 62 74 GS D V = 10 V, I = 19 A 68 74 GS D Forward Transconductance g V = 5 V, I = 10 A 18 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 700 1000 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110 OSS GS DS Reverse Transfer Capacitance C 50 RSS nC Total Gate Charge Q 25 40 G(TOT) Threshold Gate Charge Q 0.7 G(TH) GatetoSource Charge Q V = 10 V, V = 80 V, I = 19 A 2.4 GS GS DS D GatetoDrain Charge Q 9.6 GD Plateau Voltage V 3.2 V GP Gate Resistance R 2.4 G SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 7.0 ns d(on) Rise Time t 16 r V = 10 V, V = 80 V, GS DD I = 19 A, R = 6.1 D G TurnOff Delay Time t 35 d(off) Fall Time t 40 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 V SD J V = 0 V, I = 19 A GS S T = 125C 0.72 J Reverse Recovery Time t 50 ns RR Charge Time T 38 a V = 0 V, dI /dt = 100 A/ s, GS S I = 19 A S Discharge Time T 14 b Reverse Recovery Charge Q 112 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2