C9 M AND PIN A NTHD3100C MOSFET Power, Complementary, ChipFET 20 V, +3.9 A /-4.4 A Features NTHD3100C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 2) R 113 C/W JA JunctiontoAmbient t 10 s (Note 2) R 60 C/W JA 2. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol N/P Test Conditions Min Typ Max Unit OFF CHARACTERISTICS (Note 3) DraintoSource Breakdown Voltage V N 20 V I = 250 A (BR)DSS D V = 0 V GS P I = 250 A 20 D Zero Gate Voltage Drain Current I N V = 0 V, V = 16 V 1.0 A DSS GS DS T = 25 C J P V = 0 V, V = 16 V 1.0 GS DS N V = 0 V, V = 16 V 5.0 GS DS T = 125 C J P V = 0 V, V = 16 V 5.0 GS DS GatetoSource Leakage Current I nA N V = 0 V, V = 12 V 100 GSS DS GS P V = 0 V, V = 8.0 V 100 DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V N I = 250 A 0.6 1.2 V GS(TH) D V = V GS DS P I = 250 A .45 1.5 D DraintoSource On Resistance R N V = 4.5 V , I = 2.9 A 58 80 DS(on) GS D P V = 4.5 V , I = 3.2 A 64 80 GS D m N V = 2.5 V , I = 2.3 A 77 115 GS D P V = 2.5 V, I = 2.2 A 85 110 GS D Forward Transconductance g N V = 10 V, I = 2.9 A 6.0 S FS DS D P V = 10 V , I = 3.2 A 8.0 DS D CHARGES AND CAPACITANCES Input Capacitance C N V = 10 V 165 pF ISS DS P V = 10 V 680 DS Output Capacitance C N V = 10 V 80 OSS DS f = 1 MHz, V = 0 V GS P V = 10 V 100 DS Reverse Transfer Capacitance C N V = 10 V 25 RSS DS P V = 10 V 70 DS Total Gate Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 2.3 nC G(TOT) GS DS D P V = 4.5 V, V = 10 V, I = 3.2 A 7.4 GS DS D Threshold Gate Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.2 G(TH) GS DS D P V = 4.5 V, V = 10 V, I = 3.2 A 0.6 GS DS D GatetoSource Gate Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.4 GS GS DS D P V = 4.5 V, V = 10 V, I = 3.2 A 1.4 GS DS D GatetoDrain Miller Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.7 GD GS DS D P V = 4.5 V, V = 10 V, I = 3.2 A 2.5 GS DS D 3. Pulse Test: pulse width 250 s, duty cycle 2%.